High speed, low driving voltage vertical cavity germanium-silicon modulators for optical


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5.2.3 Measurement Result 
In this characterization, we used the actual modulator structure for the pump probe 
measurement in the setup described above, however, the measured response was not 
limited by the device parasitics. After propagating through the SiGe modulator with 
suitable delays, the probe and reference beams were simultaneously incident on a slow 
detector. The amplitude of the difference frequency (1 MHz) was detected using a 
high-frequency lock-in amplifier. This signal is proportional to the transmission of the 
modulator. The energies of the pump and probe pulses were 650fJ and 20fJ, 
respectively. 
The response of the modulator depends strongly on the pump wavelength and 
bias voltage, Typically, the modulator transmission varies abruptly over a few 
picoseconds and recovers to its initial transmission value within several tens of 
picoseconds. Fig 5.11 shows the relative transmission variation of the modulator, 
immediately after perturbation from the pump pulse vs. the bias voltage for various 
pump wavelengths. For low bias voltage (typically below 4 V), the modulator 
response is weak. For large bias voltage, the response depends on the pump 
wavelength. It can be seen that at 1.4µm wavelength, the transmission variation is 
strongest. 


 
 
 
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 1380nm
 1390nm
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