Influence of pressure on creation microdimensions inclusions of surface of metal-glass-semiconductor structures
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OF SURFACE OF METAL-GLASS-SEMICONDUCTOR STRUCTURES S.I. Vlasov, O.O. Mamatkarimov, A.V. Ovsyannikov, F.A. Saparov
National University of Uzbekistan, Tashkent, Uzbekistan. E-mail: vlasov@uzsci.net
In this work results of research of influence of uniform hydrostatic pressure on parameters of interface semiconductor - glass for structure metal - glass - semiconductor (MGS) are resulted. Glass from fine-dyspersated charge such as Pb0-SiO 2 -B
0 3 -Al 2 0 3 -Ta 2 0 5
(Pb0-52%, SiO 2 -29%, B 2 0 3 -12%, Al 2 0 3 -6% Ta
2 0 5 -1%), it was put on surface of silicon (KEF-10 with crystallographic orientation <111>) and the subsequent fusion (at Т=680 0 С)
and alloy (at Т=470 0 С) were made. The structures were exposed to uniform pressure up to 4 kilobar on installation "Gidrostat -16". Microphotography of surface (increase 2400) of glass for two structures (1- before subjected to pressure, 2- after subjected to pressure 4 kilobar) are shown in picture. From comparison this two pictures one can see: after subjected to pressure on the surface of glass appeared some additional inclusions. Manufacture of metal - glass - semiconductor structure (by means of dispersal of Al ) and measuring their curve relaxations, show the next.
Curve relaxations, (which were measured after voltage from
V 1 V 2 switching, where V 1 =6V,
V 2 =14V, at temperature-10С) for structures subjected to pressure, are more prolonged than curve relaxations for structures without subjected to pressure. It means that uniform hydrostatic pressure results in appeared additional micro dimensions inclusions which can capture holes from inversion layer, which determines speed process of relaxations. It is revealed, that in structures subjected to pressure the integrated density of surface states is a little bit less, than in control structures.
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