Influence of pressure on creation microdimensions inclusions of surface of metal-glass-semiconductor structures


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INFLUENCE OF PRESSURE ON CREATION  MICRODIMENSIONS INCLUSIONS 



OF SURFACE OF METAL-GLASS-SEMICONDUCTOR STRUCTURES 

S.I. Vlasov, O.O. Mamatkarimov, A.V. Ovsyannikov, F.A. Saparov  

 

National University of Uzbekistan, Tashkent, Uzbekistan.  



E-mail: vlasov@uzsci.net 

 

In this work results of research of influence of uniform hydrostatic pressure on 



parameters of interface semiconductor - glass for structure metal - glass - semiconductor 

(MGS) are resulted. Glass from fine-dyspersated charge such as Pb0-SiO

2

-B

2



0

3

-Al



2

0

3



-Ta

2

0



5

    


(Pb0-52%, SiO

2

-29%,  B



2

0

3



-12%, Al

2

0



3

-6% Ta


2

0

5



-1%), it was  put on surface of silicon 

(KEF-10 with crystallographic orientation <111>) and the subsequent fusion (at Т=680

0

С) 


and alloy (at Т=470

0

С) were made. The structures were exposed to uniform pressure up to 4 



kilobar on installation "Gidrostat -16".  

Microphotography  of  surface (increase 2400)  of  glass  for two structures (1-  before 

subjected to pressure, 2- after subjected to pressure 4 kilobar) are shown in picture. From 

comparison this two pictures one can see: after subjected to pressure on the surface of glass 

appeared  some additional inclusions. Manufacture of metal - glass - semiconductor structure 

(by means of  dispersal of Al ) and measuring  their curve relaxations, show the next. 

 

 

 



 

 

Curve relaxations, (which were measured after voltage



 

from


 

V

1



V

2

 switching, where



 

V

1



=6V,

 

V



2

=14V, at temperature-10С) for structures subjected to pressure, are more prolonged  

than curve relaxations  for structures without subjected to pressure. 

It means that uniform hydrostatic pressure results in appeared  additional micro 

dimensions inclusions which can capture holes from inversion layer,  which determines speed 

process of  relaxations. It is revealed, that in structures subjected to pressure the integrated 

density of surface states is a little bit less, than in control structures.  

 

 



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