Сапаев И. Б. 1,2, Саъдуллаев С. О

3-rasm. Birikma yuzasining mikrofotografiyasi.

4-rasm. Elementlarning birikma yuzasida rentgen-spektroskopiya natijalariga ko‘ra taqsimlanishi.
Rentgen-spektroskopiya natijalari 4-rasmda keltirilgan. nSi taglik yuzasida Si miqdori CdTe dan oshadi. Plyonka o‘sishi bilan Si miqdori asta-sekin kamayadi, CdTe esa ortadi. Qatlamlar yuzasidan kadmiy va tellurning ikkilamchi elektron emissiyasi eng yuqori intensivlikka ega ekanligi 4-rasmda ko‘rinadi; ya’ni plyonkalarning sirt qatlami asosan CdTe dan iborat. Ma’lumki, sirt holatlarining past zichligi bilan geterostruktura hosil qilish uchun nomuvofiqlik 7% ichida bo'lishi kerak [17].
Xulosa
Vakuumda termik bug‘lanish usulining boshqa metodlardan arzon hamda oddiy ekanligi bilan ajralib turadi. Biz bu usulda Si tagliklarda yuqori sifatli kompozitsion CdTe qatlamlarini ishlab chiqarish mumkinligini ko‘rsatdik. Si-CdTe birikmalarini quyosh elementlari yoki namlik datchiklari sifatida ishlatish mumkin. Birikma olinishining optimal rejimi bosim ≈1,3×10^-4 Pa da va temperatura 475 °C da ekani aniqlandi.
Minnatdorchilik. Si-CdTe birikmasini olishda yaqinda yordam bergan O‘zFA “Fizika-Texnika” Institutiga o‘z minnatdorchiligimizni bildiramiz.
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