Shakhrukh Kh. Daliev, Shoira P. Usmanova
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ijeter227892020
Shakhrukh Kh. Daliev et al., International Journal of Emerging Trends in Engineering Research, 8(9), September 2020, 6322 – 6325 6322 Energy Spectrum of Defective Centers in Silicon Doped with Molybdenum 1 Shakhrukh Kh. Daliev, 2 Shoira P. Usmanova, 3 Anifa D. Paluanova 1 Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, shakhrukhd@mail.ru 2 TashkentState Pedagogical University named after Nizami, :shoirausmanova@mail.ru 3 Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, anifa_84@mail.ru ABSTRACT The processes of the formation of defect centers in Si doped with molybdenum have been using the methods of capacitive spectroscopy. It is shown that the diffusion introduction of molybdenum atoms into silicon leads to the formation of defect centers with deep levels E C –0.20 eV and E C –0.29 eV with electron capture cross sections n = 2·10 -17 cm 2 and n = 4·10 -16 cm 2 in n- Si with an ionization energy Е V +0.35 eV and a hole capture cross section p = 7·10 -15 cm 2 was found. It was found that when doped with a molybdenum impurity when growing single-crystal silicon, deep levels are not observed, although According to preliminary data of neutron activation analysis, Mo atoms are present in the bulk of Si in a rather high concentration (~ 10 16 cm -3 ). Key words: Capacitive, diffusion, doping, defect center, deep level, impurity, molybdenum, photocapacity, spectroscopy, silicon. Download 129.46 Kb. Do'stlaringiz bilan baham: |
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