Single-photon absorption of light and linear circular dichroism in gallium phosphide electronic conductivity

SINGLE-PHOTON ABSORPTION OF LIGHT AND LINEAR CIRCULAR DICHROISM IN GALLIUM PHOSPHIDE ELECTRONIC CONDUCTIVITY
Rozikov Jurabek Yuldoshboy ugli,

Ruziboev Valijon Umarali ugli,

Mamatova Makhliyo Adkhamovna

teachers of the department of physics

Raimjonova Umida Gayratjon kizi,

Student

Fergana state university, Fergana, Uzbekistan

[e-mail]

Introductions. Single-photon absorption of light in the gallium phosphide structures is very different from the nonlinear absorption in a bulk semiconductor. This is because in structures with dimensional-quantized wells light absorption occurs in the two-dimensional wave vector space, similar to the semiconductor bulk and quantum dimensional between states.

Aim. In the spherical approximation in the energy spectrum of current carriers-photon nonlinear absorption of infrared radiation (IR) and submillimeter range in semiconductors with a band consisting of two closely spaced branches, considered in. It is shown that the light absorption coefficient decreases with increasing intensity. Homogeneous view on the issue of single-photon absorption mechanism of nonlinearity of light depending on its polarization degree is offered in.

Below we consider the dependence of the saturation effect, a contribution to the single-photon absorption coefficient of light in semiconductors with band structure consisting of two closely spaced sub-zones, one of which has a "cone-shaped" structure, on the radiation intensity.

For an arbitrary intensity light optical intersubband transition probability per unit volume can be represented as

, (1)

where