2. 47 Zn-Ga-Si-p-se

Copyright © 2015, 1993 Elseiver B.V. All rights reserved.

[295] Saidov AS, Saidov MS. Liquid phase epitaxy of (Ge₂)_1-x(GaAs)_x and (Si₂)_1-x(GaP)_x solid solutions.

Cryst Prop Prep 1991b:36-38:515-8.

2.47 Zn-Ga-Si-P-Se

ZnSe-GaP-Si. Epitaxy layers of solid solutions (ZnSe)_1-x(Si₂)_x(GaP)_y (0≤x≤0.03, 0≤y≤0.09)

were grownup from the limited volume of tin solution melting by liquid-phase epitaxy procedure

(Saidov et al. 2012). These solid solutions represent the stable phase)

• 
  M.S. Saidov and A.S. Saidov (1991a) (IV2)_x(III-V)_1-x , (IV2)_x(II-VI)_1-x ,
  

(IV-IV 2)_x(III-V)_1-x solid solutions-promising, semiconductor materials.

Pror. Sixth International Workshop and Physics of Semiconductor Devices.

Tata McGraw-Hill, New Delhi. 227-234.

• 
  A.S. Saidov and M.S. Saidov (1991b) Liquid phase epitaxy of (Ge₂)_1-x(GaAs)_x
  

and (Si₂)_1-x(GaP)_x solid solutions. Crystal Prop. 36-38. 515-518.

• 
  A.S. Saidov, A.S. Razzakov and E.A.Koshchanov (2001) Liquid phase epitaxy
  

of Ge_1-xSn_x semiconductor films. Tech. Phys. Lett. 27. 698-700.