Influence of the ultrasonic irradiation on characteristic of the structures metal-glass-semiconductor

The spectral distribution of the density of surfaces along the silicon zone is almost unchanged after the ultrasound effect, so that ultrasound in metal-glass-semi-conductive structures leads to the change in the structure of glass layers at the boundary layer of the semiconductor glass separation. Separation of crystals in the glass content may lead to the decrease in the width and number of boundary phases, while the decrease in the rate of the external genera- tion and its time-varying variation. To investigate this hypothesis, the Al layer, which performs the chemo-electrode service from the MIS, has been removed and the surface layers of the anticholic vapors are removed. Then the microflora of the glass surface was obtained.

Figure 6. Microphotography of the surface of the investigated structures a) before ultrasonic exposure b) after ultrasonic with a power P = 0.5 W/cm^2 for t=90 minutes

Figure 6 shows the magnification of the glass surface of the two enlarged (2800 times) structures. Comparison of images suggests that, in ultrasound structures, the glass surface is less sensitive to a variety of additives and non-strangers.

5. Conclusion
Based on these results, when influenced at a frequency of 2.5 MHz, with a power of 0.5 W for 40 minutes, on the structures of Al-n-Si-glass-Al leads to a decrease in the integrated density of localized electronic states on the boundary of interphase of semiconductor - glass, and the surface electronic state of the semiconductor do not affect the energy spectrum, and the rate of surface generation decreases. Ultrasonic processing can lead to the improvement of the recombinative properties of the genera of the silicate glass and silicon boundary phase phase in the order shown.
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