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Kenjayev Otabek Elektronika va Sxemalar 8-labaratoriya ishi
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- Elektronika va sxemalar 1
- Yarimo’tkazgichli diod parametrlari va xarakteristikalarini tadqiq etish. Ishning maqsadi: Yarimo’tkazgichli diod Volt-amper xarakteristikasi (VAX) asosida
- Yarimo’tkazgichli diod VAXsining yo’g’ri shaxobchasini (VAX) o’lchash prinspial sxemasi.
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O‘ZBEKISTON RESPUBLIKASI AXBOROT TEXNOLOGIYALARI VA KOMMUNIKATSIYALARINI RIVOJLANTIRISH VAZIRLIGI MUHAMMAD AL-XORAZMIY NOMIDAGI TOSHKENT AXBOROT TEXNOLOGIYALARI UNIVERSITETI Kafedra Elektronika va radiotexnika Fan Elektronika va sxemalar 1
LABORATORIYA ISHI № 8 Mavzu:
YARIMO’TKAZGICHLI DIOD PARAMETRLARI VA XARAKTERISTIKALARINI TADQIQ ETISH. Guruh: 218-19 Bajardi: Kenjayev O.I. Tekshirdi: Teshaboyev X.N. Toshkent-2020
Yarimo’tkazgichli diod parametrlari va xarakteristikalarini tadqiq etish. Ishning maqsadi: Yarimo’tkazgichli diod Volt-amper xarakteristikasi (VAX) asosida ularning parametrlarini hamda asosiy fizik xossalarini tadqiq etish. 13-variant. Ryuk=0,76kΩ Diod markasi – 1N1204C
Yarimo’tkazgichli diod VAXsining o’lchash prinspial sxemasi NL Multisim dasturiy muhitida yig’ilgan ko’rinishi.
Jadval. O lc h ash
𝐼 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖
mA 0 0.2 0.4 0.6 0.8 1 2
6 8 10 12 14
16 18
20 𝑈 𝑡𝑜′𝑔′𝑟𝑖 V 0 0, 159
0, 192 0, 21 3
0, 22 8
0, 239
0, 27 5
0, 31
0, 33 1
0, 34 6 0, 35 8
0, 36 7
0, 375
0, 382 0, 388 0, 394 H iso b lash
𝑅 𝑠𝑡𝑎𝑡 kOm
0 0, 79 5
0, 48
0, 35 5
0, 28 5 0, 23 9
0, 13 75
0, 07 75 0, 05 52
0, 04 32
0, 03 58 0, 03 06
0, 02 68
0, 02 39 0, 02 16
0, 01 97
𝑅 𝑑𝑖𝑓𝑓
kOm
0 0, 79 5
0, 16 5
0, 10 5 0, 07 5
0, 0 55
0, 03 6 0, 019 0, 01 05
0, 0075
0, 006
0, 0045
0, 004
0, 0 035
0, 0 03
0, 0 03
𝑙𝑛𝐼 𝑡𝑜′𝑔′𝑟𝑖
0 -1 .6 09
-0 .9 16
-0 .5 11 -0 .2 23
0 .0 00
0 .6 93 1 .3 86
1 .7 92
2 .0 79 2 .3 03
2 .4 85
2 .6 39 2 .7 73
2 .8 90
2 .9 96 𝑈 𝑎𝑝𝑝𝑟
0 0, 207
0, 233 0, 265 0, 280 0, 294 0, 327 0, 364 0, 383 0, 401 0, 414 0, 417 0, 428 0 ,4 3 7
0, 441
0, 450
Statik qarshilikni hisoblaymiz: 𝑅 𝑠𝑡𝑎𝑡
= 𝑈 𝐼 𝑅 𝑠𝑡𝑎𝑡 = 0 0 = − 𝑅 𝑠𝑡𝑎𝑡 = 0,159
0,2∗10 −3 = 0,795 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,192 0,4∗10 −3 =0,48 * 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,213 0,6∗10 −3 = 0,355 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,228 0,8∗10 −3 = 0,285 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,239 1∗10 −3 =0,239* 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,275 2∗10 −3 = 0,1375 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,31 4∗10 −3 = 0,0775 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,331 6∗10 −3 = 0,0552 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,346 8∗10 −3 = 0,0432 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡
= 0,358
10∗10 −3 = 0,0358 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,367 12∗10 −3 = 0,0306 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,375 14∗10 −3 = 0,0268 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,382 16∗10 −3 = 0,0239 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,388 18∗10 −3 = 0,0216 ∗ 10 3
𝑅 𝑠𝑡𝑎𝑡 = 0,394 20∗10 −3 = 0,0197 ∗ 10 3
Differensial qarshilikni hisoblaymiz: 𝑅 𝑑𝑖𝑓𝑓
= ∆𝑈 ∆𝐼 = 𝑈 𝑛 −𝑈 𝑛−1
𝐼 𝑛 −𝐼 𝑛−1
𝑅 𝑑𝑖𝑓𝑓 = 0 0 = −
𝑅 𝑑𝑖𝑓𝑓
= 0,159−0
0.2∗10 −3 −0 = 0,795 ∗ 10 3
𝑅 𝑑𝑖𝑓𝑓
= 0,192−0,159 0.4∗10 −3
−3 = 0,165 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0,213−0,192 0.6∗10 −3 −0.4∗10 −3 = 0,105 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0,228−0,213 0.8∗10 −3 −0.6∗10 −3 = 0,075 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0,239−0,228 1∗10 −3 −0.8∗10 −3 = 0,055 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0,275−0,239 2∗10 −3 −1∗10 −3 = 0,036 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0.31−0,275 4∗10 −3 −2∗10 −3 = 0,019 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0.331−0.31 6∗10 −3 −4∗10 −3 = 0,0105 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0.346−0.331 8∗10 −3 −6∗10 −3 = 0,0075 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0.358−0.346 10∗10 −3 −8∗10 −3 = 0,006 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0.367−0.358 12∗10 −3 −10∗10 −3 = 0,0045 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0.375−0.367 14∗10 −3 −12∗10 −3 = 0,004 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0.382−0.375 16∗10 −3 −14∗10 −3 = 0,0035 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0.388−0.382 18∗10 −3 −16∗10 −3 = 0,003 ∗ 10 3
𝑑𝑖𝑓𝑓 = 0.394−0.388 20∗10 −3 −18∗10 −3 = 0,003 ∗ 10 3
ln(𝐼 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 0.2 = − 1.609 ln(𝐼
𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 0.4 = − 0.916 ln(𝐼 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 0.6 = − 0.511 ln(𝐼
𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 0.8 = − 0.223 ln(𝐼 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 1 = 0.000 ln(𝐼
𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 2 = 0.693 ln(𝐼 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 4 = 1.386 ln(𝐼
𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 6 = 1.792 ln(𝐼 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 8 = 2.079 ln(𝐼
𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 10 = 2.303 ln(𝐼 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 12 = 2.485 ln(𝐼
𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 14 = 2.639 ln(𝐼 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 16 = 2.773 ln(𝐼
𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 18 = 2.890 ln(𝐼 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) = ln 20 = 2.996 𝐼 𝑡𝑜′𝑔′𝑟𝑖 = 𝑓(𝑈 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 )
𝑅 𝑠𝑡𝑎𝑡
= 𝑓(𝐼 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 )
𝑅 𝑑𝑖𝑓𝑓 = 𝑓(𝐼
𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) 𝑙𝑛𝐼
𝑡𝑜′𝑔′𝑟𝑖 = 𝑓(𝐼
𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) Approksimatsiya kuchlanishini hisoblash: 𝑈 𝑎𝑝𝑝𝑟 = 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) 𝑏 = ln 𝐼
𝑛 −ln 𝐼
𝑛−1 𝑈 𝑛 −𝑈 𝑛−1
𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈 2 ) 𝑏 = ln 𝐼 1 −ln 𝐼 0 𝑈 1 −𝑈 0 = −10,11 𝑏 = ln 𝐼
2 −ln 𝐼
1 𝑈 2 −𝑈 1 = 21 𝑏 = ln 𝐼
3 −ln 𝐼
2 𝑈 3 −𝑈 2 = 27 𝑏 = ln 𝐼
4 −ln 𝐼
3 𝑈 4 −𝑈 3 =19,2 𝑏 = ln 𝐼
5 −ln 𝐼
4 𝑈 5 −𝑈 4 =19.2 𝑏 = ln 𝐼
6 −ln 𝐼
5 𝑈 6 −𝑈 5 =20.27 𝑏 = ln 𝐼
7 −ln 𝐼
6 𝑈 7 −𝑈 6 =19.25 𝑏 = ln 𝐼
8 −ln 7
𝑈 8 −𝑈 7 =19.8
𝑏 = ln 𝐼
9 −ln 𝐼
8 𝑈 9 −𝑈 8 =19.33 𝑏 = ln 𝐼
10 −ln 𝐼
9 𝑈 10 −𝑈 9 =19.13 𝑏 = ln 𝐼
11 −ln 𝐼
10 𝑈 11 −𝑈 10 =18.66 𝑏 = ln 𝐼
12 −ln 𝐼
11 𝑈 12 −𝑈 11 =20.22 𝑏 = ln 𝐼
13 −ln 𝐼
12 𝑈 13 −𝑈 12 19.25 𝑏 = ln 𝐼
14 −ln 𝐼
13 𝑈 14 −𝑈 13 =19.14 𝑏 = ln 𝐼
15 −ln 𝐼
14 𝑈 15 −𝑈 14 =19.5 𝑏 =
ln 𝐼 16 −ln 𝐼 15 𝑈 16 −𝑈 15 =17.66 𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈
2 )=1 𝐼 0
2 − 𝑏 ∗ 𝑈
2 )=0.007 𝐼 0
2 − 𝑏 ∗ 𝑈
2 )=0.002 𝐼 0
2 − 𝑏 ∗ 𝑈
2 )=0.01 𝐼 0
2 − 𝑏 ∗ 𝑈
2 )=0.01 𝐼 0
2 − 𝑏 ∗ 𝑈
2 )=0.007
𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈
2 )=0.01
𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈
2 )=0.008
𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈
2 )=0.0099 𝐼 0
2 − 𝑏 ∗ 𝑈
2 )=0.01
𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈
2 )=0.012
𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈
2 )=0.007
𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈
2 )=0.01
𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈
2 )=0.01
𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈
2 )=0.009
𝐼 0 = exp (ln 𝐼 2 − 𝑏 ∗ 𝑈
2 )=0.019
𝑈 𝑎𝑝𝑝𝑟 = 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1)=0 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1)=0.207 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1)=0.233 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1)=0.265 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.280 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.294 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.327 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.364 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.383 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.401 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.414 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.417 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.428 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.437 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.441 𝑈 𝑎𝑝𝑝𝑟
= 1 𝑏 ∗ ln( 𝐼 𝑡𝑜′𝑔′𝑟𝑖 𝐼 0 + 1) =0.450 𝐼 𝑡𝑜′𝑔′𝑟𝑖 = 𝑓(𝑈 𝑡𝑜 ′ 𝑔 ′ 𝑟𝑖 ) va 𝐼 𝑡𝑜′𝑔′𝑟𝑖
= 𝑓(𝑈 𝑎𝑝𝑝𝑟
)
Yarimo’tkazgichli diod VAX sining teskari shahobchasini o’lchash uchun quyidagi sxema yig’iladi:
Yarimo’tkazgichli diod VAXsining teskari shahobchasini o’lchash prinsipial sxemasi.
Yarimo’tkazgichli diod VAXsining teskari shahobchasini o’lchash sxemasini Nl Multisim dasturiy muhitida yig’ilgan ko’rinishi. U tes
, V 0 -0.5 -1
-2 -3
-4 -5
-6 -7
-8 -9
-10 I tes , mkA
0 0,154
34,391 176,744
327,308 479,753 633,043 786,815 940,896 1095
1250 1404
𝐼 𝑡𝑒𝑠 = 𝑓(𝑈 𝑡𝑒𝑠
) Xulosa: Man Kenjayev Otabek “ Yarimo’tkazgichli Diod Parametrlari Va Xarakteristikalarini Tadqiq Etish” mavzusida
laboratoriya ishida yarimo’tkazgichli diod haqida qo’shimcha ma’lumotlarga ega bo’ldim va o’rganganlarimni mustahkamladim. Yarimo’tkazgichli diod parametrlari va xarakteristikalarini tadbiq etdim. 1-bo’lib uning sxemasini NL Multisim dasturiy muhitida yig’ib oldim. Keyin unda kerakli kuchlanishni o’lchadim. So’ng esa dastlabki hisoblashlarni qildim. Ulardan kelib chiqib grafiklarini chizdim. Keyin teskari yarimo’tkazgichni sxemasini NL Multisim dasturiy muhitida yig’dim, keyin tok kuchini o’lchadim, so’ng esa grafik chizdim. Download 0.92 Mb. Do'stlaringiz bilan baham: 
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