Overall view of Radiation Detectors Group activities

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Overall view of Radiation Detectors Group activities

  • Manuel Lozano

CNM Clean Room expansion

  • From 1000 to 1500 m2
  • New equipments ready with partial coverage for 15 cm (6’’) wafers
  • We plan to do prototype runs of simple detectors in 6’’ in 2010
  • New ion implanter for 6’’

Radiation detector group

  • Started in 1996
  • 12 people
    • 6 PhD, 4 PhD students, 2 Eng.
  • 2 senior + 1 PhD student from Power devices group
  • More researchers at CNM from other department joining radiation detector activities
  • Circuit design
    • Device development
    • Simulation
    • Radiation effects

Radiation Detector Group

  • PhD
    • Manuel Lozano
    • Enric Cabruja
    • Miguel Ullán
    • Giulio Pellegrini
    • Celeste Fleta
    • David Quirion
    • Salvador Hidalgo
    • David Flores
  • Engineers
    • David Almansa
    • Joaquín Rodríguez
  • PhD students
    • Sergio Díez
    • Juan Pablo Balbuena
    • Daniela Bassignana
    • Consuelo Guardiola
    • Pablo Fernández
  • Incorporation of a CPAN Engineer and a CSIC Electronic Technician
  • Increased technical capacity

R&D in radiation detectors at CNM

  • Collaboration with other Spanish Groups
    • IFIC
    • IFAE
    • IFCA
    • University Santiago de Compostela
    • University Barcelona


  • ALIBAVA detector readout system
  • ALIBAVA Telescope
  • Modules for ATLAS upgrade
  • APDs for tracking in future accelerators (Angeles Faus project)

ALIBAVA: A readout system for microstrip silicon sensors

  • System finished
  • 20 units already distributed
  • 20 more units manufactured
  • Upgrade for test beam telescope
  • Upgrade for ethernet connectivity

Modules for ATLAS upgrade

  • Study of radiation hardness of 0.25 µm SiGe BiCMOS technologies from IHP (Germany)
  • Study of radiation hardness of LDMOS transistors for DC-DC converters.
  • Understanding radiation degradation mechanisms
  • Simulation and modeling of irradiated devices (transistors, detectors, etc)
  • Embedded fanins for Endcap modules
  • Dummies
  • 2nd IHP test chip
  • 1st IHP test chip
  • 1st IBM test chip


  • Easy access through the Spanish “Access to Large Facilities” Program: ICTS GICSERV
  • Projects related to radiation detectors:
    • 2010: 5 projects approved (1 rejected)
      • 3D pixels for CMS, 3D for synchrotron, dummies for IBL, proof of concept for Totem, UBM for DEPFET bump bonding
    • 2009: 7 projects approved (1 rejected)
      • 3D medipix-type detectors; Stripixels; Thin pixel detectors; Thin strip detectors; Atlas pixels with slim edge; UBM for DEPFET bump bonding
    • 2008: 5 projects approved
    • 2007: 3 projects approved
  • Big increase in radiation detector activity in CNM Clean Room
  • GICSERV Progam working very satisfactory

Technologies under development

  • Planar & 3D pixels for IBL and ATLAS upgrade 3D detectors
  • Thin devices
  • Thin pixels for LHCb upgrade
  • 3D detector technology
  • 3D pixels for LHCb
  • IR transparent detectors
  • Double side strip detectors
  • Stripixels
  • Active edge and trenched detectors
  • Ultrathin 3D detector
  • Neutron detectors
  • Avalanche Photodiodes
  • 6 inches processing: pixel detectors only (no poly)

Planar & 3D pixels for IBL and ATLAS upgrade

  • CNM and IFAE are part of the ATLAS 3D Collaboration for the IBL (Insertable B-layer) of the ATLAS Pixel detector
  • Collaboration being formed. MoU to be signed soon.
  • Ref.: O. Rohne – Vertex 2009

Thin devices

  • Run already started
  • Based on SOI wafers
  • 100, 150 and 200 µm thick active devices
  • Strip detectors with integrated fanins in double metal technology
  • Grooves in silicon to integrate optical fibres to measure deformation
  • GICSERV funded

Thin pixels for LHCb upgrade

  • First tests of bump bonding of thin pixel detectors with Timepix chip.
  • Detectors already manufactured at CNM
  • Waiting for thinning and bump bonding
  • GICSERV funded

3D detector technology

  • Second institute in the world (after Stanford) in developing a 3D detector technology
  • Success with Medipix type pixel sensors
  • Now we are designing of a new mask set for ATLAS pixel sensors
  • Work done in the framework of RD50 collaboration.
  • Partially funded GICSERV
  • Electron collecting strip detectors
  • Bias Voltage fixed at 150V for all irradiated samples
  • Non-irradiated sample biased at 18V
  • Detector’s ceramic based board temperature between
  • -10°C to -15°C
  • Measured with ALIBAVA system (25ns shaping time)

3D pixels for LHCb

  • In collaboration with Glasgow University
  • First 3D Medipix-like sensor bump bonded to Timepix chip
  • Successfully tested in CERN test beam
  • Pion beam
  • Individual pion tracks
  • telescope
  • DUT

IR transparent detectors

  • In collaboration with IFCA
  • Run almost finished
  • 12 different detectors
  • Common parameters:
  • SiO2 thickness map (wafer 2)
  • Strips with 3 µm Al width lines

Double side strip detectors

  • Double side strip detectors developed for Monash University (Australia)
  • Also developing double side packaging and wire bonding
  • Future collaboration with Universidad de Huelva for nuclear physics
  • Stripixels
  • Combination of the concept of double side reading with 3D contacts
    • Better performace than classic stripixels
    • Single side processing
    • 2D position sensitivity
    • 2N readout channels (instead of N2)
  • Simulations and mask design ready
  • Wafers to be processed

Active edge and trenched detectors

  • Trenches used to reduce the dead area at the edge of the sensor
  • Work started in collaboration with IFAE (Cristobal Padilla)
  • Features:
    • Implanted edge side
    • Backplane and edge in the same electrode
  • Designed detectors:
    • PAD
    • Microstrips
    • MediPix2
    • Circular

Ultrathin 3D detector

  • 10 µm thick detector
  • Virtually no entry window
  • Used for tracking of light particles
  • 300um
  • Etched backside
  • Thin membrane

Neutron detection

  • Neutrons interact very lightly with matter and cannot be detected by ionization
  • Neutron detection can not be made directly with silicon devices
  • It is necessary to use conversion layers and detect the converted particle:
    • Fast neutrons  Moderator  slow down
    • Slow neutrons  Converter  capture
  • Moderator
  • Converter
  • Detector
  • Moderator
  • Converter
  • Detector
  • H-rich materials
  • like polyethylene
  • High cross-section
  • Charged particle with high E
  • It’s possible develop compatible compounds with Si
  • 10B

High efficiency neutron detectors

  • Planar covered diodes only achieve 3% efficiency
  • Enough for many applications
  • When more efficiency id needed, 3D structures are needed
    • Textured surfaces
    • Holes filled with converter material
    • Pillar type diodes surrounded by converter material
  • Future

Simulation of Geiger mode APDs

  • Device simulation of Geiger mode APDs with Sentaurus

Avalanche Photodiodes (APDs)

  • Power Devices and Radiation Detectors Groups at IMB-CNM have started a new research line in optoelectronic silicon detectors.
  • Cover the needs of the scientific community with custom made devices designed for specific applications
  • We have finished electrical and technological simulations
  • We are now designing the masks
  • Next year we will process the devices.
  • We plan to develop
    • Linear mode APDs (to use with scintillators)
    • Geiger mode APDs high energy tracking
    • In the future, also SiPMs
  • We are open for collaboration and feedback from other groups
  • Electric field in the avalanche zone


  • Next RD50 meeting will be held in Barcelona
  • (31st May, 1st & 2nd June 2010)
  • http://cern.ch/rd50/

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