Shakhrukh Kh. Daliev, Shoira P. Usmanova

---

Shakhrukh Kh. Daliev
 et al.,  International Journal of Emerging Trends in Engineering Research, 8(9), September 2020, 6322 – 6325
6322 
Energy Spectrum of Defective Centers in Silicon Doped with 
Molybdenum 

1
Shakhrukh Kh. Daliev, 
2
Shoira P. Usmanova, 
3
Anifa D. Paluanova 
1
Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, 
[e-mail] 
2
TashkentState Pedagogical University named after Nizami, :[e-mail] 
3
Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent,
[e-mail]
 
 
ABSTRACT 
The processes of the formation of defect centers in Si 
doped with molybdenum have been using the 
methods of capacitive spectroscopy. 
It is shown that the diffusion introduction of 
molybdenum atoms into silicon leads to the 
formation of defect centers with deep levels E
C
–0.20 
eV and E
C
–0.29 eV with electron capture cross 
sections 
n
= 2·10
-17
cm
2
and 
n
= 4·10
-16
cm
2
in n-
Si. In the p-Si samples, one deep level 
with an ionization energy Е
V
+0.35 eV and a hole 
capture cross section 
p
= 7·10
-15
cm
2
was found. It 
was found that when doped with a molybdenum 
impurity when growing single-crystal silicon, deep 
levels are not observed, although According to 
preliminary data of neutron activation analysis, Mo 
atoms are present in the bulk of Si in a rather high 
concentration (~ 10
16
cm
-3
). 
Key words: Capacitive, diffusion, doping, defect 
center, 
deep 
level, 
impurity, 
molybdenum, 
photocapacity, spectroscopy, silicon.