Bajardi: G. H. Sattorova Tekshirdi: D. R. Djo’rayev Mavzu: Nanolitografiya. Optik litografiya. Elektron nurli litografiya. Rengen litografiya. Ionli litografiya. Imprint litografiya. Reja

Foydalanigan adabiyotlar.

1. 
   Nondestructive measurement of nuclear magnetization by off-resonant
   
2. 
   Faraday rotation / R. Giri, S. Cronenberger, M. M. Glazov et al. //
   
3. 
   Phys. Rev. Lett._ 2013._ Vol. 111._ P. 087603
   
4. 
   Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions /Takayuki Ishikawa. at al. J.Appl.Phys. 2008. 103. P. 07A919(13).
   
5. 
   On the influence of bandstructure on transport properties of magnetic tunnel junctions with Co2Mn1−xFexSi single and multilayer electrode / J. Schmalhorst. at al. // J.Appl.Phys. 2008.104. P. 043919(1-3).
   
6. 
   Spin polarization of Co2FeSi full-Heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions / Z. Gercsi at al.\\Appl.Phys.Lett. 2006. 89. P. 082512.
   
7. 
   175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes / N. Tezuka at al. // Appl.Phys.Lett. 2006. 89.P. 252508.
   
8. 
   A. Hirohata at al. //Current Opinion in Solid State and Materials Science. 2006. Vol. 10. P.93–107.
   
9. 
   Improved current switching symmetry of magnetic tunneling junction and giant
   
10. 
    magnetoresistance devices with nano-current-channel structure / Xiaofeng Yao. at al. //J.Appl.Phys. 2008. V. 103. P. 07A717(1-3).
    
11. 
    Magnetic anisotropy of Co2MnSn1−xSbx thin films grown on GaAs (001) / Moti R. at al. //J.Appl.Phys. 2009. V. 105. P. 07E902(1-3).
    
12. 
    Magnetic properties and spin polarization of Co2MnSi Heusler alloy thin films epitaxially grown on GaAs(001) / W. H. Wang. at al. //Phys. Rev. 2005. V. B 71. P. 144416(1-14).
    
13. 
    Spin-transfer switching in an epitaxial spin-valve nanopillar with a full-Heusler