High speed, low driving voltage vertical cavity germanium-silicon modulators for optical

Table Of Contents 
 
Abstract .......................................................................................................................... iv
 
Acknowledgements ....................................................................................................... vi
 
Table Of Contents ........................................................................................................ viii
 
Abstract ......................................................................... Error! Bookmark not defined.
List of Tables .................................................................................................................. x
 
List of Figures ................................................................................................................ xi
 
Chapter 1
 
Introduction ............................................................................................... 1
 
1.1
 
Interconnects ................................................................................................. 1
 
1.1.1
 
Off-Chip Interconnects ....................................................................... 2
 
1.1.2
 
On-Chip Interconnects ........................................................................ 3
 
1.2
 
Optical Interconnect Systems ........................................................................ 5
 
1.3
 
Research on Optical Modulators ................................................................... 7
 
1.3.1
 
Modulation Mechanism Study............................................................ 7
 
1.3.2
 
Previous work on high-speed Si based modulator ............................. 8
 
1.4
 
Organization ................................................................................................ 10
 
Chapter 2
 
Background .............................................................................................. 11
 
2.1
 
Absorption in Semiconductors .................................................................... 11
 
2.1.1
 
Interband Absorption ........................................................................ 11
 
2.1.2
 
Exciton Absorption ........................................................................... 13
 
2.1.3
Impurity absorption .......................... Error! Bookmark not defined.
2.1.4
 
Low Energy Absorption ................................................................... 15
 
2.1.5
 
Franz-Keldysh Effect ........................................................................ 16
 
2.1.6
 
Quantum Well Structure ................................................................... 17
 
2.1.7
 
Quantum-Confined Stark Effect ....................................................... 18
 
2.2
 
SiGe Material Platform ............................................................................... 22
 
2.2.1
 
Band Structures ................................................................................ 22
 
2.2.2
 
SiGe Alloy Properties ....................................................................... 24
 
2.3
 
Band Engineering ........................................................................................ 26
 
2.3.1
 
Type-I Aligned Quantum Well ......................................................... 27
 
2.3.2
 
Type-II Aligned Quantum Well ....................................................... 27
 
2.3.3
 
Band Engineering in Ge Quantum Wells ......................................... 28
 
2.4
 
Structure Design .......................................................................................... 29
 
2.4.1
 
Band structure design ....................................................................... 31
 
2.4.2
 
Band Parameters ............................................................................... 32
 
2.4.3
 
Previous Simulation .......................................................................... 33
 

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