One-dimensional hole gas in germanium silicon nanowire hetero-structures Linyou Cao Department of Materials Science and Engineering


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One-dimensional hole gas in germanium silicon nanowire hetero-structures

  • Linyou Cao

  • Department of Materials Science and Engineering

  • Drexel University

  • 12/09/2005


Motivation-Why?

  • Quantum Confinement not reported in NW

    • Ballistic Transport
    • Conductance Quantification
  • Controlled synthesis of NW offering substantial potential to engineer in 1-D electronic system

  • Band-gap engineering in hetero-system widely used in semiconductor technique



Si/Ge NW



Chemical Vapor Deposition





Fabrication of Devices











Ballistic Transport-Conception







Conclusion

  • Create a 1D hole gas system in Ge/Si core/shell NW heterostructures.

  • Ballistic transport through individual 1D subbands due to confinement of carriers in the radial direction

  • Little temperature dependence, suggesting a room temperature carrier mean free path on the order of several hundred nanometers



Questions:

  • Physical model for Ge/Si,

    • the effect of depletion thickness of Ge/Si??
    • Effect of radial size of Ge/Si
    • Effect of spin polarization??
  • Theoretical Explanation for Ballistic Transport in Si/Ge??



What we can do??

  • 1-D Electron Gas, inverse Ge/Si??

  • Controlled 1-D gas via external field, like Quantum Hall Effect

  • Compound Semiconductor Hetero-Junction??

  • Multi-layer Junction to make coupled hole-electron,hole-hole,electron-electron gas??

  • Bipolar transistor, like Optic-electronic



Thanks



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