Structural and Electronic Properties of Zno nanoclusters: a b3lyp dft study
Download 0.92 Mb. Pdf ko'rish
|
pandey2013
- Bu sahifa navigatsiya:
- Acknowledgement
Electronic structure.The calculated HOMO-LUMO gaps for all the studied structures are
presented in Table 1. The computed value of HOMO-LUMO gap for the diatomic ZnO linear structure is 2.63 eV, which is much higher than the calculated value of Jain et. al [19]. For the Zn 2 O 2 rhombus structure, the calculated value of 1.33 eV is very close to the other’s calculated values [19, 20, 21] as shown in Table 1. The observed trend of the enhancement of the HOMO- LUMO gap with decrease in the size of the nanocluster is in conformity with the quantum confined behavior. The experimental values [13] for the HOMO-LUMO gaps for ZnO and Zn 2 O 2 nanoclusters are quite high. Conclusions We have predicted the bond lengths, binding energies, HOMO-LUMO gaps for Zn m O n (m + n = p = 2 to 4) nanoclusters, which need to be verified experimentally. We observe that the nanoclusters containing large number of strongly electronegative O atoms for p = 3 and 4 are most stable. The maximum stability is seen for the ZnO 3 cluster having maximum number of O atoms. The most stable clusters have linear or planer structures and not the three dimensional structures. The observed trend of the enhancement of the HOMO-LUMO gap with decrease in the size of the nanocluster is in conformity with the quantum confined behavior. Acknowledgement The authors are thankful to University Grants Commissions, New Delhi and SP Memorial Institute of Technology, Allahabad, Uttar Pradesh for its financial assistance. Corresponding Author Dheeraj Kumar Pandey, Department of Physics, Faculty of Science, University of Allahabad, Allahabad (UP)-211002, India. Mobile No: 09935732832. Email address: pdhiraj2000@gmail.com. References [1] Z.L. Wang, X.Y. Kong, Y. Ding, P.X. Gao, W.L. Hughes, R.S. Yang and Y. Zhang: AdV. Funct Mater. Vol 14 (2004), p. 943-956 [2] Z.L. Wang: Mater. Today (June 2004), p. 26-33. [3] H. Kind, H. Yan, M. Law, B. Messer and P. Yang: AdV. Mater. Vol 14 (2002), p. 158-160. [4] A. Burnin and J.J. BelBruno: Chem. Phys. Lett. Vol. 362 (2002), 341. [5] L.M. Kukreja, A. Rohlfing, P. Misra, F. Hillenkamp and K. Dreisewerd: Appl. Phys. A: Mater. Sci. Process Vol. 78 (2004), p. 641-644. Download 0.92 Mb. Do'stlaringiz bilan baham: |
Ma'lumotlar bazasi mualliflik huquqi bilan himoyalangan ©fayllar.org 2024
ma'muriyatiga murojaat qiling
ma'muriyatiga murojaat qiling