Studying the effect of light on a diode mode connected field transistor

 
CONCLUSION 
In the diode mode, the photosyncrasy mechanism of the field transistor has 
been studied, according to which it has been found that increasing 
the intensity of illumination increases the depth of absorption of 
radiation, and the difference in contact potentials in the P-n 

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Academic Research in Educational Sciences 
Volume 4 | Issue 3 | 2023 
ISSN: 2181-1385 
ISI: 0,967 | Cite-Factor: 0,89 | SIS: 1,9 | ASI: 1,3 | SJIF: 5,771 | UIF: 6,1 
 
 
 
 
 
540
 
March, 2023 
https://t.me/ares_uz Multidisciplinary Scientific Journal 
transition reduces and leads to an increase in the thickness of the conduction part of 
the n- layer. 
 
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the temperature sensitivity of a transistor structure in a bipolar mode of measurement- 
Journal of Engineering Physics and Thermophysics, 89(2), 514-517,2016. 
2. D.R. Dzhuraev, A.A. Turaev. Features of key parameters of field transistors-
Scientific reports of Bukhara State University, 3 (2), 7-10, 2020. 
3. D.R. Djuraev, A.V. Karimov, D.M. Yodgorova, A.A. Turaev. The Principles Of 
Increasing The Sensitivity Of Transistor Structures To External Influences-Euroasian 
Journal of Semiconductors Science and Engineering 7(1), 36, 2019. 
4. A.V. Karimov, D.R. Djuraev, O.A. Abdulhaev, A.Z. Rahmatov, Yodgorova, D. 
M.,&Turaev, A.A. Tenso properties of field-effect transistors in channel cutoff mode- 
International Journal of Engineering Inventions e-ISSN, 2278-7461, 2016.