Ўзбекистон миллий университети қошидаги яримўтказгичлар физикаси ва микроэлектроника илмий-тадқИҚот институти ҳузуридаги илмий

Implementation of research results. The main results of a new and original 
method of diffusion alloying of silicon crystals with nickel, which does not lead to 
a change in their initial electrical and recombination parameters and makes it 
possible to preserve these parameters during subsequent additional thermal 
annealing in a wide temperature range from 100 ºС to 1100 ºС, using for the first 
time the discovered effect of gettering by clusters of nickel atoms various 
"harmful" defects and uncontrolled impurity atoms (Fe, Mn, O
2
etc.), were 
introduced and used in «FOTON» JSC (certificate No. 04-1/1425 dated August 4, 
2020 was given to Uzeltehsanoat JSC). The use of scientific results has made it 
possible to increase thermal stability and increase the yield of silicon diode 
structures that are suitable with the same parameters. 
A new method for stabilizing the lifetime of minority charge carriers in 
silicon, regardless of its type of conductivity and the concentration of initial 
impurity atoms in a wide temperature range up to 1200 °C, based on preliminary 
alloying of silicon with nickel at a temperature of T=1100÷1200 °C during 
t=30÷60 minutes at the level of cluster formation, made it possible to optimize the 
technological process of low-temperature corrective annealing during the 
production of low-voltage silicon zener diodes and voltage limiters at JSC 
Novosibirsk Semiconductor Devices Plant with Special Design Bureau (Reference 
No. 04/401-225 of the JSC Novosibirsk Semiconductor Devices Plant with Special 
Design Bureau
” of
23
th
July of 2020). The use of the developed technological 
solution in JSC "Novosibirsk Semiconductor Devices Plant with Special Design 
Bureau" as a whole has a particularly great practical importance in the production 
of diode p-n structures that require the limiting concentration levels of dopants 
obtained by the diffusion method. 
In the process of implementation in the period 2012-2016. fundamental 
project OT-F-2-41 «Theoretical and experimental studies of sputtering processes, 
the introduction of atoms, the formation of nanoscale structures and strained layers 
during the implantation of ions into materials of various nature (metals, 
semiconductors and dielectrics)”, the results of this thesis were used. 
The use of these scientific results made it possible to obtain a semiconductor 
material with a controllable nanoscale structure with stable electrophysical 
parameters, which, in general, increased the efficiency of fundamental 
experimental studies of the processes of sputtering, the introduction of atoms, the 
formation of nanoscale structures and stressed layers during the implantation of 
ions into semiconductors. (Reference No. 89-03-2651, July 27, 2020, of the 
Ministry of Higher and Secondary Specialized Education of the Republic of 
Uzbekistan). The results obtained can also be successfully applied in small-scale 
production, as well as in the manufacture of more efficient silicon solar cells, both 
on an industrial scale and in scientific laboratories of the Academy of Sciences and 
universities. 

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