Paper Title (use style: paper title)

Features of liquid-phase epitaxy of new complex solutions (Si₂)_1-x(GaN)_x, their luminescent and electrical properties

Amin Saidov
Physical–Technical Institute
Uzbekistan Academy of Sciences
Tashkent, Uzbekistan
orcid.org/0000-0002-9124-6430

Shukrullo Usmonov

Physical–Technical Institute
Uzbekistan Academy of Sciences
Tashkent, Uzbekistan
[e-mail]

Dadajon Saparov

Physical–Technical Institute
Uzbekistan Academy of Sciences
Tashkent, Uzbekistan
orcid.org/0000-0002-9282-9048
Tolmas Ishniyazov
Physical–Technical Institute
Uzbekistan Academy of Sciences
Tashkent, Uzbekistan
[e-mail]

Kurban Gaimnazarov

Gulistan State University, Sirdarya, Uzbekistan.
[e-mail]

Abstract: The possibility of growing an epitaxial film of a solid solution of molecular substitution (Si₂)_1-x(GaN)_x on Si substrates, which can be used as a buffer layer for growing epitaxial GaN films on Si substrates, is studied. The conditions for the formation of a solid solution of molecular substitution (Si₂)_1-x(GaN)_x are analyzed on the basis of the rules of generalized moments. It is shown that the photoluminescence spectrum of the (Si₂)_1-x(GaN)_x solid solution has a wide band covering the visible range of the emission spectrum from 400 to 650 nm with an emission maximum at λ_max = 438 nm, which corresponds to the photon energy E_ph = 2.83 eV. The electronic energy level of atoms of Si₂ molecules located at E_i = 1.66 eV below the bottom of the conduction band of the solid solution was revealed. The results of the current-voltage characteristic studies have been shown that the current transfer in the p-Si–n-(Si₂)_1-x(GaN)_x structure is stable in the temperature range 300–360 K. It was shown that Si₂ in the solid solution (Si₂)_1-x(GaN)_x has a local energy band with a width of 0.27 eV.