Bugungi kunda yurtimizda barcha sohalarda islohot o’tkazish va bu sohalarni rivojlantirish uchun kerakli barcha choralarni amalga oshirish ishlari amalga oshirilmoqda

Kontkat ish maromi. 2, b – rasmda atomlar orasidagi o’zaro ta’sir kuchining zond uchi va sirt o’rtasidagi masofa z ga bog’liqligi keltirilgan. Zond uchi sirtga yaqinlashganda ular o’rtasida tortishish vjudga keladi. Bunda masofaning kamayishi bilan tortishish kuchi ortadi (2, b – rasmdagi 2 - soha).

Xulosa:
Hozirgi davrda zamonaviy atom kuch mikroskopiyasi butun dunyoda turli tadqiqotlarni olib borishda keng miqyosda qo‘llanilmoqda. Masalan u biologiyada viruslarni, hujayralarni, genlarni o‘rganishda qo‘llanilib, unga juda katta umidlar bog‘lanmoqda. Bundan tashqari AKM ni texnologiyada qo‘llash ham juda istiqbolli yo‘nalish ekanligi ta’kidlanmoqda. Masalan, AKM litografiyada - sirtni mexanik tarzda tirnash uchun ham, tig‘ni potensial berib, tig‘ tagidagi sirtni oksidlantirish uchun ham ishlatilmoqda. Bu esa skanlovchi zondli mikroskopiyaning nanolitografiya talablari uchun qo‘llashda keng imkoniyatlari borligidan dalolat beradi.

Foydalanigan adabiyotlar.

1. 
   Nondestructive measurement of nuclear magnetization by off-resonant
   
2. 
   Faraday rotation / R. Giri, S. Cronenberger, M. M. Glazov et al. //
   
3. 
   Phys. Rev. Lett._ 2013._ Vol. 111._ P. 087603
   
4. 
   Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions /Takayuki Ishikawa. at al. J.Appl.Phys. 2008. 103. P. 07A919(13).
   
5. 
   On the influence of bandstructure on transport properties of magnetic tunnel junctions with Co2Mn1−xFexSi single and multilayer electrode / J. Schmalhorst. at al. // J.Appl.Phys. 2008.104. P. 043919(1-3).
   
6. 
   Spin polarization of Co2FeSi full-Heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions / Z. Gercsi at al.\\Appl.Phys.Lett. 2006. 89. P. 082512.
   
7. 
   175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes / N. Tezuka at al. // Appl.Phys.Lett. 2006. 89.P. 252508.
   
8. 
   A. Hirohata at al. //Current Opinion in Solid State and Materials Science. 2006. Vol. 10. P.93–107.
   
9. 
   Improved current switching symmetry of magnetic tunneling junction and giant
   
10. 
    magnetoresistance devices with nano-current-channel structure / Xiaofeng Yao. at al. //J.Appl.Phys. 2008. V. 103. P. 07A717(1-3).
    
11. 
    Magnetic anisotropy of Co2MnSn1−xSbx thin films grown on GaAs (001) / Moti R. at al. //J.Appl.Phys. 2009. V. 105. P. 07E902(1-3).
    
12. 
    Magnetic properties and spin polarization of Co2MnSi Heusler alloy thin films epitaxially grown on GaAs(001) / W. H. Wang. at al. //Phys. Rev. 2005. V. B 71. P. 144416(1-14).
    
13. 
    Spin-transfer switching in an epitaxial spin-valve nanopillar with a full-Heusler