On phenomena in ionized gases
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- Optical emission and mass spectrometric characterization of an atmospheric microwave plasma jet
- Investigation of collisional processes in dense semiclassical plasma
- Dependence of anode glow on surrounding geometry in a parallel plate glow discharge plasma
- 3. Results and discussion
- 4. References
- RF plasma simulation using semi-analytical sheath model
- 2. Method 2.1. Interface Problem
- 2.2. Semi-analytical RF sheath model
- 2.3. Ion Energy Distribution Function (IEDF) and sputtering etch rate.
- 3. Results and Discussions
3. References [1] R. Kumar, R. Narayanan, A. Prasad, Phys. Plasmas 21 (2014) 123501. [2] M. Agop, D. G. Dimitriu, L. Vrajitoriu, M. Boicu, J. Phys. Soc. Jpn. 83 (2014) 054501. [3] K. S. W. Sing, D. H. Everett, R. A. W. Haul, L. Moscou, R. Pierotti, J. Rouquérol, T. Siemieniewska, Pure Appl. Chem., 57 (1985) 603. Topic number: 4 248
XXXIII ICPIG, July 9-14, 2017, Estoril/Lisbon, Portugal
Optical emission and mass spectrometric characterization of an atmospheric microwave plasma jet
J. Lo 1 P , L. Chauvet P 1 P , C. Muja 1 , L. Latrasse P 2 P , Ph. Guillot 1
1 Laboratoire Diagnostics des Plasmas Hors Equilibre (DPHE), Université de Toulouse, INU Champollion, Albi, France 2 P
In this work, characterization of a surface wave discharge (SWD) in argon at atmospheric pressure generated by a surfatron device was performed by optical emission spectroscopy (OES), iCCD imaging and Time-Of-Flight Mass Spectrometer (TOF MS). The objective is to determine the spatial distributions of different species and evaluate different ions (TOF MS) generated by the source for different operating conditions.
Increasing interest in cold atmospheric pressure plasma jets (APPJ) has been observed during the last decade. Their applications are largely investigated in various fields such as nanomaterial synthesis [1], decontamination and sterilization [2], cancer treatment [3] or analytical chemistry [4]. Their ability to propagate in open air and to allow the formation of a rich chemical environment populated by ions, radicals and excited species make them promising versatile tool.
In this work, the surfatron plasma source (S- wave) is a compact source designed for industrial and laboratory applications which operates at atmospheric pressure. The plasma is generated in a dielectric tube (4 mm internal diameter and 6 mm external diameter placed within the source) by a solid-state microwave generator (200 W, 2.45 GHz). The microwave electric field
propagates longitudinally at the dielectric/plasma interface. Hence, a plasma column is created and sustained with lengths varying as a function of the operating gas flow, microwave power and gas nature. In our case, the discharge gas is Argon maintained at 1 sl/min. The S-Wave plasma source is inductively coupled, thus only two tuning adjustments are provided to match the impedance. During operation, 0 W of reflected power is achieved using the integrated tuners. The source can be efficiently applied to the production of reactive/excited species.
Resolved spatial optical emission distribution measurements were performed with an optical spectrometer (HR2000+, Ocean Optics) and with an iCCD camera
(PIMAX-2K-RB, Pearson
Instruments). The optical measurements were performed with an iCCD camera coupled with filters to observe the spatial distributions of the main species emissions (argon, oxygen, nitrogen). The influence of the power will be presented and discussed. The presence of the ions created by the jet will be investigated with a Time-Of-Flight Mass Spectrometer (TOF MS).
Figure 1: Intensities of argon (751 nm) and oxygen (777 nm) optical emissions as a function of axial position associated with iCCD camera imaging at 100 W power input, 1 sl/min
argon.
[1] S. Yu, K. Wang, S. Zuo, J. Liu, J. Zhang, J. Fang, Phys. Plasmas, 22 (2015), 103522. [2] E.
Dolezalova, P.
Lukes, Bioelectrochemistry, 103 (2015), 7-14. [3] P.-M. Girard, A. Arabian, M. Fleury, G. Bauville, V. Puech, M. Dutreix, J. Santos Sousa, Sci. rep., 6 (2016). [4] S. Martinez-Jarquin, R. Winkler, Trends in Analytical Chemistry, 89, (2017), 133-145. Topic number 9 249
XXXIII ICPIG, July 9-14, 2017, Estoril/Lisbon, Portugal
Comparisons and scaling rules between N+N 2 and N 2 +N 2 collision induced dissociation cross sections from atomistic studies
Fabrizio Esposito P 1 P , Ernesto Garcia P 2 P , Antonio Laganà P 3
P 1 P
P
P
P
Accurate modeling of air plasma chemistry, as in the case of aerothermodynamics or electrical discharges in air, needs elementary processes data with at least the specification of molecular vibration. Although this is presently well recognized in the literature, the associated heavy load of input data to handle can become an issue for both the dynamical and kinetic treatments. For this purpose we are developing some relationships between vibrationally dependent atom–diatom and diatom–diatom collision induced dissociation cross sections, and we show their successful application to the collisions of N+N 2 and N
2 +N 2 .
1. Scaling laws for collision induced dissociation
Quantitative knowledge of elementary processes involved in plasmas are key to successfully perform accurate kinetic simulations. The issue is the huge amount of data to treat, both in dynamical calculations and in kinetic simulations. The aim of this work [1] is to study collision induced dissociation detailed data in atom–molecule (AM) and molecule–molecule (MM) collisions involving nitrogen, obtained by
molecular dynamics calculations, considering vibrational states in the range 10–50 and collision energy up to 10 eV, in order to formulate suitable scaling laws resulting in less expensive computational procedures and easier to handle treatments in kinetic simulations. It is shown that, while a direct substitution of MM dissociation cross sections with AM ones might be acceptable only at very high collision energy, scaling laws application allows to obtain quite good results on almost the whole energy range of interest. Two relations are developed in this work. The first one allows to obtain dissociation cross sections of MM(v 1
2 ) collisions, being v 1 , v
2 respectively the initial vibrational states of the two molecules, from the corresponding MM(v 1 ,0), MM(v 2 ,0) dissociation cross sections. The second relation links the AM(v) cross section with the MM(v,0) one, as in fig.1. As a consequence, using both relations allows in principle to obtain any MM(v 1 ,v
) dissociation cross section, provided AM(v 1 ), AM(v
2 ) cross sections are known. The advantage is clear, being a three-body dynamical calculation significantly less expensive than a four-body one. The possibility of a compact expression of the MM dissociation cross sections, expressed as a function of the AM ones, is also an advantage for the kinetic codes where those data are used. Rotation of the vibrationally more excited molecule can be included in the scaling. Work is in progress to extend these scaling laws to other collisional systems. 2. References [1] F.Esposito, E.Garcia, and A.Laganà, Plasma Sources Science and Technology, 26 (2017) 45005 (doi:10.1088/1361-6595/aa5d27).
molecule collision induced dissociation cross sections from the shown rovibrational states with corresponding values derived from atom-molecule ones.
Topic 1
250 XXXIII ICPIG, July 9-14, 2017, Estoril/Lisbon, Portugal
Topic number
K.M. Turekhanova 1 , D.S. Kaliyeva 1
1 IETP, al-Farabi Kazakh National University, 71, al-Farabi av., Almaty, 050040, Kazakhstan
collective effect and screening. Collisional characteristics of plasma are obtained numerically by using several effective pseudopotential models with clear difference arising between them.
Currently, a clear and accurate theoretical description of dense plasma remains an actual problem. Kinetic properties are the most important characteristics of dense plasma, the study of attract more and more interest. Finding the particle distribution function is one of the main problems in plasma physics. In work [1] the form of the particle distribution function determined by various parameters and processes. The main mechanism that determines the fastest part of the distribution function is the escape of electrons to the walls. Also, electron energy distribution functions have a rich structure induced by super elastic collisions between excited species and cold electrons. Super elastic vibrational collisions play an important role in affecting the electron energy distribution function in a wide range of the electric field [2].
Due to the influence of external forces the particle distribution function deviates from the equilibrium leading to the change of the average energy and directional velocity of the particles and the distribution function, which depends on the velocity components. To describe this processes, the pseudopotentials was used that takes into account the charge screening at long distances and quantum effect of diffraction, which occurs in dense systems. As well, mean energy of the electrons was calculated by the Coulomb logarithm by using the distribution function in a strong field [3] for continuous collision cross section. The Coulomb logarithm determines by the scattering angle of particle in plasma. By solving the scattering angle of particle we got collisional characteristics of dense plasma such as scattering sections, free lengths and frequencies of particles on the basis of effective pseudopotential models. The results obtained in this work are compared with the results of other theoretical methods and computer simulations.
The tail of distribution function of particles in external electric field increases with the decrease of plasma density parameter when we take into account quantum mechanical and screening effects. This effect is possibly connected with decrease of the collision frequencies [4] and with the formation of some ordered structures in dense plasma.
[1] M. Capitelli, G. Colonna, O. De Pascale et al. Plasma sources science and technology. 18. 014014 (2009).
[2] L.D. Pietanza, G. Colonna, G. D’Ammando et al. Physics of Plasmas. 23. 013515 (2016). [3] A.A. Kudryavtsev, L.D. Tsendin. Technical Physics. 44. 1290 (1999) [4] T.S. Ramazanov, K.M. Turekhanova. Phys. Plasmas. 12. 102502 (2015)
251 XXXIII ICPIG, July 9-14, 2017, Estoril/Lisbon, Portugal
Dependence of anode glow on surrounding geometry in a parallel plate glow discharge plasma
P. K. Barnwal, S. Kar, R. Narayanan, A. Ganguli, R. D. Tarey. Centre for Energy Studies, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, India, 110016
An intense anode glow is observed in a parallel plate glow discharge plasma (cathode to anode surface area ratio ≈ 90; cathode: grounded) that strongly depends on the surrounding geometry. The electrode system was placed inside a grounded vacuum vessel. The experiments were performed in three configurations: (a) when the discharge is allowed between the electrodes by covering them with a glass tube and mica discs at the ends, the anode glow appears only at low currents. (b) When a deliberate leak is introduced using smaller diameter mica discs that allow plasma to escape from the ends to reach the cathodic vacuum chamber, the anode glow is still formed at low currents, but a negative differential resistance (NDR) along with hysteresis appear in the I-V characteristics. (c) However, when the discharge is exposed to the whole chamber, the anode glow is present at high discharge currents also, although the NDR and hysteresis disappear.
Anode glow may appear at low discharge currents to maintain the discharge [1,2] by formation of a potential double layer which accelerates the electrons near the anode, energizing them to energies above the ionization energy of the gas, which causes additional ionization near the anode. The present paper correlates the dynamics of anode glow with the system geometry at various discharge currents.
The experimental setup consists of a cylindrical stainless steel chamber (inner diameter 150 mm and height 355 mm) in which two planar electrodes (grounded cathode (dia. = 76 mm) and anode (dia. = 8 mm)) were placed at a separation of 35 mm. A glass tube of inner diameter, 90 mm along with mica discs at the two ends, were used to cover the electrode system to isolate the plasma from the grounded chamber walls. The external circuit was completed through a variable DC power supply (1kV, 1A) and a variable ballast resistor. The argon gas pressure (p) was varied from 200 to 800 mTorr. The experiments were carried out in three different configurations: (a) the plasma discharge was completely isolated from the chamber walls; (b) a small gap was permitted between the glass tube and the electrodes (at both ends); (c) both glass tube and mica discs were removed and the discharge was left fully uncovered.
Discharge characteristics (plot of discharge voltage (V) versus discharge current (I)) were observed at different gas pressures for all three configurations. In configurations (a) and (b), the anode glow appears at low currents (≤ 2 mA) and its size and intensity are found to be linked to the slope of the I-V characteristics. More interestingly, an NDR with hysteresis is observed in the I-V characteristics in configuration (b). However, in configuration (c), the anode glow is present throughout, at all currents. Also, the size of the glow is larger and more intense than for configurations (a) and (b). Figure (1) shows the plasma snap shot for covered (Fig. 1a) and uncovered (Fig.1b) conditions.
Fig. 1. Plasma snap shot at p = 400 mTorr for covered (Fig. a) and un-covered (Fig. b) (at I d = 0.55 mA and 30 mA respectively). The minimum discharge voltage required to sustain the discharge at 400 mTorr in configurations (a) and (b) is V ≈ 225 V, which is greater than that for configuration (c), for which, V ≈ 180 V. The detailed experimental results will be presented in the conference.
[1] K. G. Emeleus, Int. J. Electronics, 52 (1982) 407.
[2] B. Song, N. D. Angelo, R. L. Merlino, J. Phys. D Appl. Phys., 24 (1991) 1789. Topic number 8 88
252 XXXIII ICPIG, July 9-14, 2017, Estoril/Lisbon, Portugal
RF plasma simulation using semi-analytical sheath model
M. Miyashita P 1 P
P 1 P
P
We have developed a simulation technique to calculate sputtering etch rate distribution by accelerated energetic ions in radio frequency(RF) sheath within short computation time, in order to develop a high density and low metal contamination plasma source. The estimated sputtering etch rate distribution on the RF antenna cover qualitatively reproduced the experimental result.
We have developed a plasma model according to the equipment in order to design the new device [1]. This paper focuses on the RF plasma source. A RF plasma source is expected as one of the plasma source with low metal contamination and high density. The plasma is sustained by providing RF power of 13.56MHz through U-shaped antenna in chamber. The RF antenna is isolated by dielectric cover from plasma. In design, the sputtering etch rate distribution on the RF antenna cover is important. However, expensive calculation cost is needed for RF simulation. We introduce a new model which does not resolve sheath thickness by interface problem.
The electronic fluid equation in plasma connects to usual Poisson equation in antenna cover and chamber with semi-analytical RF sheath model. This is so called interface problem. The calculation cost can be reduced for the mesh of the sheath area can be ignored. We
have developed a hybridized discontinuous Galerkin method to deal with this interface problems [2].
A unified RF sheath model for wide frequency region is proposed in this report [3]. First of all, we investigated the mathematical property of this RF model by method of dynamical system. The phase space diagram reveals stability of the trajectory. Thus far, the calculation diverged because the surface of the dielectric is positively charging if large voltage condition is applied to the antenna on numerical simulation. We found this phenomenon is not a numerical divergence but a problem in the physical model.
2.3. Ion Energy Distribution Function (IEDF) and sputtering etch rate. The ion energy distribution on the RF antenna cover can be estimated from the potential waveform. An approximation of ion energy distribution is described with convolution integral by Green function and sheath voltage wave form under the some simple assumption [4]. The IEDF can be gotten by inverse Fourier transformation. Finally, the sputtering etch rate distribution is calculated by using the estimated IEDF and sputtering yield. The calculated sputtering etch rate distribution on the RF antenna cover is compared with result of measurement.
Fig.1 shows the sputtering etch rate distribution on the RF antenna cover. The calculated result qualitatively reproduced the experimental result. The rate in the proposed method is relatively larger than the rate in the conventional single frequency model on the power supply side (0, 0.8m). In the near future, we will perform experiment by improved design using simulation technique.
Fig.1 sputtering etch rate distribution on the RF antenna cover.
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