Optoelectronic Semiconductor Devices Principals and Characteristics
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Optoelectronic Semiconductor Devices-Principals an
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- Figure 24.
- 4.1.1 SURFACE-EMITTING LED
4.1 TWO BASIC LED STRUCTURES
The basic structures of various kinds of LEDs are illustrated in Figure 24. a) Burrus type; b) surface-emitting type (double heterostructure type); c) surface-emitting type (homojunction type). [5] Figure 24.: Cross-section illustration of the basic surface-emitting types of LEDs: In LEDs used in optical fiber communication systems, efficient spontaneous emission originating from the injection excitation is favorable to reduce input power, and thus a pn-heterojunction - usually DH - is used. A pn-homojunctions (as well as pn-heterojunctions) is still used in LEDs emitting red or yellow light because it is easy to fabricate. The light originating in the spontaneous emission process is emitted from the light-emitting region (active layer) in all directions. Consequently, several structures restricting the emitted light to a certain directions have been developed. These LED structures are basically divided into two groups: The surface-emitting and Edge-emitting types. 4.1.1 SURFACE-EMITTING LED The surface-emitting LEDs emit the light in a direction perpendicular to the pn-junction plane. Figure 24. shows three surface-emitting types of LEDs. The general idea is that a narrow active layer is sandwiched between two cladding layers. Because of heterojunctions on either side of the active layer, injected carriers are confined within the thin active region. The thick substrate is used to provide mechanical support and electrical contacts. In the Burrus type, the emitted light is absorbed in the substrate. If the wavelength (photon energy) of the emitted light is shorter (higher) then the fundamental absorption edge (band-gap energy) of the substrate, most of the emitted light is absorbed in the substrate. In such case, a part of the substrate corresponding to the light-emitting region is etched off to prevent the absorption. The light-emitting region is usually limited in order to keep the operating current low and, for LEDs used in optical fiber communication systems, to facilitate the coupling of the light to a fiber. The emitting region is limited by confining the injected current to a part of the electrode. The electrode is in contact with a cap layer, usually 30 to 50 µm in diameter, and is limited by a dielectric film such as SiO 2 . If the emitted light is transparent in the substrate, the substrate can be chemically or physically etched down to lens structure to improve the light-emitting pattern. a) monolithic-lensed type; b) hemispherically shaped type; c) edge-emitting type with a guiding layer; d) edge-emitting type with local emitting area. Download 1.1 Mb. Do'stlaringiz bilan baham: |
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