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Optoelectronic Semiconductor Devices-Principals and Characteristics.
Article
· January 2002
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Irina Stateikina
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Optoelectronic Semiconductor Devices -
Principals and Characteristics.
By: Irina Stateikina
i_statei@ece.concordia.ca
Presented to Professor Kahrizi
Department of Electrical Engineering
Concordia University
Submitted in partial fulfillment
of the requirements
for the course ENGR-797
Contents
•
1
PREFACE
•
2
ENERGY LEVELS AND BANDS IN SOLIDS
o
2.1 PHOTON EMISSION IN SEMICONDUCTORS: THE CREATION OF LIGHT
o
2.2 SEMICONDUCTOR MATERIALS FOR DIODE LASERS
o
2.3 BASIC SEMICONDUCTOR LUMINESCENT
DIODE STRUCTURES
o
2.4 SUMMARY ON THE BASIC STRUCTURE OF MODERN ILD, LED AND SLD
•
3
LASER DIODES
o
3.1
BROAD AREA LASERS
o
3.2 STRIPE GEOMETRY LASERS
o
3.3 SINGLE-FREQUENCY SINGLE-MODE INJECTION LASERS: FABRY-PEROT
LASERS
o
3.4 BASIC CHARACTERISTICS OF LASER DIODES
o
3.5
DIFFERENCES OF ILD FROM GAS, LIQUID DYE AND SOLID STATE LASERS
o
3.6 RECENT DEVELOPMENTS
•
4
LIGHT-EMITTING DIODES
o
4.1
TWO BASIC LED STRUCTURES
o
4.2 BASIC CHARACTERISTICS OF LED
•
5
SUPERLUMINESCENT DIODES
•
6
COMPARISON OF ILD, LED AND SLD
•
7
PHOTODIODES
o
7.1
BASICS OF PHOTODIODES
•
8
DEVICE FABRICATION
o
8.1 CRYSTAL GROWTH
o
8.2 DEVICE FABRICATION PROCESSES
o
8.3
PACKAGING
•
9
REFERENCES
•
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