Optoelectronic Semiconductor Devices Principals and Characteristics

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Optoelectronic Semiconductor Devices - Principals and Characteristics. 
http://www.ece.concordia.ca/~i_statei/vlsi-opt/vlsi-opt02012002.html 
Copyright © 1993, 1994, 1995, 1996, 
Nikos Drakos
, Computer Based Learning Unit, University of 
Leeds.
Copyright © 1997, 1998, 1999, 
Ross Moore
, Mathematics Department, Macquarie University, Sydney.
2002-02-17
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Document Outline

• Optoelectronic Semiconductor Devices - Principals and Characteristics.
  • Contents
• 1 PREFACE
• 2 ENERGY LEVELS AND BANDS IN SOLIDS
  • 2.1 PHOTON EMISSION IN SEMICONDUCTORS: THE CREATION OF LIGHT
    • • • Si
        • Ge
        • GaP
        • InSb
        • InAs
  • 2.2 SEMICONDUCTOR MATERIALS FOR DIODE LASERS
    • 2.2.1 III-V SEMICONDUCTOR
    • 2.2.2 II-VI SEMICONDUCTORS
    • 2.2.3 IV-VI SEMICONDUCTORS
  • 2.3 BASIC SEMICONDUCTOR LUMINESCENT DIODE STRUCTURES
  • 2.4 SUMMARY ON THE BASIC STRUCTURE OF MODERN ILD, LED AND SLD
• 3 LASER DIODES
  • 3.1 BROAD AREA LASERS
    • • The disadvantage of broad area lasers :
  • 3.2 STRIPE GEOMETRY LASERS
    • 3.2.1 GAIN-GUIDED STRIPE GEOMETRY LASERS
    • 3.2.2 INDEX-GUIDED STRIPE GEOMETRY LASERS
  • 3.3 SINGLE-FREQUENCY SINGLE-MODE INJECTION LASERS: FABRY-PEROT LASERS
  • 3.4 BASIC CHARACTERISTICS OF LASER DIODES
    • 3.4.1 THRESHOLD GAIN AND CURRENT
    • 3.4.2 PHASE CONDITION
    • 3.4.3 EFFICIENCY AND OUTPUT POWER
    • 3.4.4 CURRENT-VOLTAGE CHARACTERISTICS
  • 3.5 DIFFERENCES OF ILD FROM GAS, LIQUID DYE AND SOLID STATE LASERS
  • 3.6 RECENT DEVELOPMENTS
    • • Disadvantages
• 4 LIGHT-EMITTING DIODES
  • 4.1 TWO BASIC LED STRUCTURES
    • 4.1.1 SURFACE-EMITTING LED
    • 4.1.2 EDGE-EMITTING LED
  • 4.2 BASIC CHARACTERISTICS OF LED
    • 4.2.1 POWER AND LIGHT EXTRACTION EFFICIENCY: SURFACE-EMITTING LED
    • 4.2.2 RADIATION INTENSITY PATTERN: SURFACE-EMITTING LED
    • 4.2.3 RADIATION INTENSITY PATTERN: EDGE-EMITTING LED
    • 4.2.4 CURRENT-LIGHT OUTPUT CHARACTERISTICS
    • 4.2.5 CURRENT-VOLTAGE CHARACTERISTICS
• 5 SUPERLUMINESCENT DIODES
• 6 COMPARISON OF ILD, LED AND SLD
  • • • From a practical point of view:
• 7 PHOTODIODES [4]
  • 7.1 BASICS OF PHOTODIODES
    • 7.1.1 pn-JUNCTION UNDER REVERSE BIAS AND REVERSE CURRENT
    • 7.1.2 OPTICAL ABSORPTION AND QUANTUM EFFICIENCY
• 8 DEVICE FABRICATION
  • 8.1 CRYSTAL GROWTH
    • 8.1.1 LIQUID-PHASE EPITAXY
      • 8.1.1.1 Advantages.
    • 8.1.2 METAL-ORGANIC VAPOR-PHASE EPITAXY
      • 8.1.2.1 Advantages
      • 8.1.2.2 Disadvantage
    • 8.1.3 MOLECULAR BEAM EPITAXY
      • 8.1.3.1 Advantages
  • 8.2 DEVICE FABRICATION PROCESSES
    • 8.2.1 ELECTRODE FORMATION
    • 8.2.2 DIELECTRIC FILM DEPOSITION
    • 8.2.3 LITHOGRAPHY AND CHEMICAL AND PHYSICAL ETCHING
  • 8.3 PACKAGING
• 9 REFERENCES
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