Rīgas Tehniskā universitāte Materiālzinātnes un lietišķās ķīmijas fakultāte
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(Invited) Artur Medvid‟, Pavels Onufrijev,. „Nano-cones formed on a surface of semiconductors by laser radiation: technology, model and properties” Program and materiāls of 3rd International Conference RADIATION INTERACTION WITH MATERIAL AND ITS USE IN TECHNOLOGIES, 2010, Kaunas, Lithuania, pp.39-42, 2010. 55.
A.Medvid‟, P.Onufrijevs, K.Lyutovich, M. Oehme, E. Kasper.” Nano-cones Formation on a Surface of Si 1-x Ge
Layers by Laser Radiation ”, Book of Abstracts 3 rd International Conference on NANO-structures Self-Assembly, NanoSEA 2010, Cassis, France, 28 June- 2 July, 2010, p.55. 56.
(Invited) A.Medvid‟.” Nano-cones Formation on a Surface of Semiconductors: Si,Ge, Si
Ge
, GaAs and CdZnTe Layers by Laser Radiation”, 11th International Young Scientists Conference SPO 2010, October 21-24, Kyiv, Ukraine, pp.28-29.
(Invited) A.Medvid„.„Nano-cones Formation on a Surface of Semiconductors: Si,Ge, Si
Ge
, GaAs and CdZnTe Layers by Laser Radiation”, ABSTRACTS of 14th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, Lithuania, August 23-25, 2010, p.12.
burtiem) un LZP apstiprinātos izdevumos 1.
A. Medvid‟, A. Mychko, A. Krivich and P. Onufrijevs. „Formation of pores in Ge Single Crystal by laser radiation”, Materials Science, Vol.10, N4,pp.197- 200, 2004. 2.
A. Medvid‟, D.V. Korbutyak, S.G. Krylyuk, Yu.V. Kryuchenko, E.I. Kuznetsov, I.M. Kupchak, L.L. Fedorenko, and P. Hlidek. Influence of Powerful Laser Radiation on Impurity-defect Structure of CdTe Detector Material, Nuclear Instruments & Methods in Physics Research A, 53, pp.157-160, 2004. 3.
A. Medvids, P.Onufrijevs. Optisku šķiedru zudumu pētīšana ar YAG:Nd +3
lāzeru, RTU zinātniskie raksti „Materiālzinātne un lietišķā ķīmija”, 9. sēj.,118- 122 lpp., 2004. 4.
formation on a surface of Ge crystal by YAG:Nd laser”, “Taikomoji fizika” Proceedings, Kauņas Tehnoloģijas universitāte, 15-16. lpp., 2004. 5.
Science Forum Vols. 457-460 pp. 411-414, 2004. 6.
A. Medvid‟, Y. Fukuda, A. Michko, P. Onufrievs , and Y. Anma.”2D lattice formation on a surface of Ge single crystal by YAG:Nd laser”, Appl. Sur. Sci, Vol. 244/1-4, pp. 120-123, 2005. 7.
A. Medvid‟, A. Mychko, A. Krivich, and P. Onufrijevs. “Formation of pores in Ge single crystal by laser radiation”, Appl. Sur. Sci. Vol. 244/1-4, pp.203- 208, 2005. - 531 - 8.
A.Medvid‟, P.Onufrijevs, D.Grabovskis, A.Mychko, V.Snitka, V.Plaushinaitiene.„Phase Transition on Surface of Group Semiconductors by Laser Radiation”, Solid State Phenomena, Getering and Defect Engineering in Semiconductor Technology XI, pp.345-350, 2005. 9.
Artur Medvid‟, Vitaly Malevich, Petro Lytvyn. Formation of nanohills on the surface of 6H-SiC:N at an early stage of laser ablation. Proc. SPIE Optical Materials and Applications.Vol. 5946, pp. 59460C-1 – 59460C-6, 2005. 10.
D. Kropman, U. Abru, T. Karner, U. Ugaste, E. Mellikov, M. Kauk, I. Heinmaa, A. Samoson, A. Medvid‟, Point defcts interaction with extended defects and impurities and its influence on the Si-SiO 2 system properties. Solid State Phenomena, Vols. 108-109, pp. 333-338, 2005. 11.
A. Medvids, P. Onufrijevs, I. Purītis, I. Dmytruk, I. Pundyk. Formation and properties of nanostructures on Ge surface by YAG:Nd laser. Rīgas Tehniskās universitātes zinātniskie raksti, 1.sērija – Materiālzinātne un lietišķā ķīmija, 11. Sēj., 35-39. lpp, 2005. 12.
T. Purītis, J. Kaupuţs, A. Medvids. Silīcija nanokristālu luminescence un optoelektronika, Rīgas Tehniskās universitātes zinātniskie raksti, 1.sērija – Materiālzinātne un lietišķā ķīmija, 11. Sēj, 52-58. lpp, 2005. 13.
properties nanohills created on a surface of Ge by laser radiation, .
http://www.ICCE-12.com (CD-version) Proc. Twelfth International Conference on composites/nano engineering, August 1-6, Tenerife, Spain, 2005. 14.
A. Medvid‟, and P. Onufrijevs Investigation of optical loses in fiber with YAG:Nd laser radiation, http://www.ICCE-12.com (CD-version) Proc. Of Twelfth International Conference on composites/nano engineering, August 1-6, Tenerife, Spain, 2005. 15.
A.Grigonis, Ţ. Rutkūniene, A. Reza, A .Medvid‟, H. Manikowski, P.Onufrijevs. „Influence of laser and ion beam irradiation to DLC films”, Proceeding of the IV International Conference NEET”2005, New electrical and electronic technologies and their industrial implementation, pp.20-23, 2005. 16.
T.Puritis, A.Medvids. Achievements in Silicon Nanocrystal Optoelectronics and Outlooks for Its Development in Latvia, Latvian Journal of Physics and Technical Sciences, Vol.6, pp.48-59, 2006. 17.
nanostructures formed by laser radiation on a surface of Ge, Si and GaAs single crystals. “JLMN-Journal of Laser Micro/ Nanoengineering", Vol. 1, No. 3, pp 72-75, 2006. 18.
A. Medvid‟, I. Dmytruk, P. Onufrijevs and I. Pundyk. Photoluminescence and Raman characterization of nanohills self-assembled on the surface of Si and Ge under laser irradiation.”Materials Science & Engineering B”, Vol.134, pp.222-226, 2006. 19.
Artur Medvid‟, Igor Dmytruk, Pavels Onufrijevs, Iryna Pundyk. Photoluminescence from Nanohills Formed on a Surface of Ge, Si and GaAs Single Crystal by Laser Radiation. Proc.of 3 ed Intern. Workshop”Relaxed, nonlinear and Acoustic Optical Processes; Materials – Growth and Optical Properties” September 06-10, 2006, Lutsk, Ukraine, pp.59-62, 2006. 20.
Photoluminescence from Nanohills Formed on a Surface of Ge and Si Single Crystals by Laser Radiation”. SPIE Proc. of the Intern. Conference AOMD-5, (accepted) 2006. - 532 - 21.
A.Grigonis, Z.Rutkuniene and A.Medvids, ”Influence of nano second pulse laser irradiation on the a-C:H films properties”. Proceedings the VI International Conference Ion Implantation and other Application of Ions and Electrons, 26-29 June, 2006, Kazimierz Dolny, Poland, p.106, 2006. 22.
A. Medvid‟, I. Dmitruk, P. Onufrijevs, D. Grabovskis and I. Pundyk, “Quantum Confinement Effect in Semiconductors, Quasi QDs Formed by Laser Radiation”, Proc. of the Intern. Conf. Radiation Interaction with Materials and its Use in Technologies 2006, Kaunas, Lithuania, 28-30 September, pp118- 121, 2006. 23.
D. Tribandis, Proc. of the Intern. Conf. Radiation Interaction with Materials and its Use in Technologies 2006, “Influence of laser heating to the hydrogenated carbon films”, Kaunas, Lithuania, 28-30 September, pp131-134, 2006.
24.
V. Litovchenko, A. Evtukh, T. Gorbanyuk, M. Semenenko, L. Fedorenko, M. Usupov, A. Medvids and P. Onufrijevs,“Laser beam technology at preparation of nanosized field emission cathodes“, Proc. of the Intern. Conf. Radiation Interaction with Materials and its Use in Technologies 2006 , Kaunas, Lithuania, 28-30 September, p.117, 2006. 25.
A. Samoson, A. Medvids and P. Onufrievs, „Hydrogen separation in the Si-SiO 2
system”, Proc. of the Intern. Conf. Radiation Interaction with Materials and its Use in Technologies 2006, Kaunas, Lithuania, 28-30 September, pp. 26-29, 2006. 26.
A. Medvid‟, P. Onufrijevs, E. Mellikov, D. Kropman, F. Muktepavela, G. Bakradze and P. Gavars, “Optical Properties of SiO 2 /Si Structure Formed by YAG:Nd Laser Radiation”, Proc. of the Intern. Conf. Radiation Interaction with Materials and its Use in Technologies 2006, Kaunas, Lithuania, 28-30 September, pp.244-247, 2006. 27.
A. Medvid‟, L. Fedorenko, D. Korbutjak, S. Kryluk and A. Mychko, “Graded Band-gap Formation in CdZnTe by YAG:Nd Laser Radiation”, Proc. of the Intern. Conf. Radiation Interaction with Materials and its Use in Technologies 2006, Kaunas, Lithuania, 28-30 September, pp.240-243, 2006. 28.
D. Kropman, E. Mellikov, T. Kärner, Ü. Ugaste, T. Laas, I. Heinmaa and A. Medvid. „ Impurity interaction with point defects in the Si–SiO 2 structures and its influence on the interface properties”, Materials Science and Engineering: B, Vol.134, pp.222-226, 2006. 29.
A. Medvid‟, A. Mychko, L. Fedorenko, B.Korbutjak, S.Kryluk, P. Onufrijevs and P.Hlidek „Graded Band-gap Formation in CdZnTe by Nd:YAG Laser Radiation”, Proceedings of LPM 2007-the 8th International Symposium on Laser Precision Microfabrication,
http://www.jlps.gr.jp/en/proc/lpm/07/ 30.
T.Puritis, A.Medvids. Achievements in Silicon Nanocrystal Optoelectronics and Outlooks for Its Development in Latvia, Latvian Journal of Physics and Technical Sciences , Vol.6, pp.48-59, 2006. 31.
Aleksandr Mychko and Artur Medvid‟, Modification of Band–Gap in Surface Layer of CdZnTe by YAG:Nd +3 Laser Radiation, Collection of papers Conference European Nano Systems (ENS 2007), pp.96-100, 2007. - 533 - 32.
A. Medvid‟, P. Onufrijevs D. Kropman, F. Muktepavela, G. Bakradze. Low–K factor of SiO 2 layer on Si irradiated by YAG:Nd laser radiation, “J. Non- Crystalline Solid”, Vol. 353, pp.703-707, 2007. 33.
Artur Medvid‟, Igor Dmytruk, Pavels Onufrijevs, and Iryna Pundyk. „Quantum Confinement Effect in Nanohills Formed on a Surface of Ge by Laser Radiation”, Phys. Stat.Sol.(c) vol. 4, No.8, pp.3066-3069, 2007. 34. A.Medvid‟, L.Fedorenko, B.Korbutjak, S.Kryluk, M.Yusupov, A.Mychko.“Modification of band-gap in surface layer of CdZnTe by YAG:Nd +3
laser radiation”, SPIE Proc. of the International Conference Advanced Optical Materials and Devices-5 ,
Vol. 6596, pp. 65961A-1-A5, 2007. 35.
A.Grigonis, Ţ.Rutkūniene, A.Medvid‟, P.Onufrijevs and J.Babonas. Modification of Amorphous a-C:H Films by Laser Irradiation, Lithuanian J. of
36.
A.Medvid‟, A.Mychko, P.Onufrijevs. “Self-organization of a 2D Lattice on a Surface of Ge Single Crystal after Irradiation with YAG:Nd Laser”,
37.
A.Medvid‟, P.Onufrijevs, I.Dmitruk and I.Pundyk. „ Properties of Nanostructure Formed on SiO 2 /Si Interface by Laser Radiation”, Solid State Phenomena, Vols. 131-133 pp. 559-562, 2008. 38.
D.Kropman, E.Mellikov, T.Karner, U.Ugaste, T.Laas, I.Heinmaa, U.Abru, A.Medvid‟,”Hydroge interaction with point defects in Si-SiO2 structures and its influence on the interface properties”, Solid State Phenomena, Vols.131-133, pp.345-350, 2008. 39.
Alfonsas Grigonis, Artur Medvid‟ , Pavels Onufrijevs, Jurgis Babonas, Alfonsas Reza, Graphitization of amorphous diamond-like carbon films by laser irradiation,
40.
A. Medvids, D.Grabovskis, P. Gavars, P.Onufrijevs, E.Daukšta “Investigation of mechanism of radiation defects generation and redistribution in semiconductors” RTU zinātniskie raksti, Vol. 16, pp.70-75, 2008. 41.
A. Evtukh.
„ Nanostructures on SiC surface created by laser microablation”,
42.
A. Medvids, D.Grabovskis, P. Gavars, P.Onufrijevs, E.Daukšta “Investigation of mechanism of radiation defects generation and redistribution in semiconductors” RTU zinātniskie raksti , Vol. 16, pp.70-75, 2008. 43.
M.Oehme, E.Kasper, „Mechanism of Nanohills growth in Si 1-x
Ge x /Si structure by laser radiation”, Proc. of Īntern.Conf. „Radiation Interaction with Material and Its Use in Technologies 2008, Kaunas, Lithuania 24-27 September, 2008, pp.194-195, 2008. 44.
Artur Medvid, Pavels Onufrijevs, Klara Lyutovich, Micaheal Oehme, Eric Kasper, Igor Dmitruk, Iryna Pundyk, Ivan S.Manak, "Mechanism of nanohills growth in Si 1-x Ge
/Si structure by laserradiation" Materials Science, vol.14, No4,pp.288-291, 2008. 45.
A.Mychko, O.Strilchyuk, N.Litovchenko, Yu.Naseka, P.Onufrijevs. A.Pludonis, "Exciton quantum
confinement effect
in nanostructures formed by laser radiation on the the surface of CdZnTe ternary compound”, Phys. Stat.Sol.(c) vol. 6, No.1, pp.209-212, 2008. - 534 - 46.
A.Grigonis, Z.Rutkuniene, A.Medvids, „The influence of nanosecond pulse laser irradiation o the properties of a-C:H films”, Vacuum, vol.82, pp.1212- 1215, 2008. 47.
Organization of Nanohills/Nanowires in SiO 2 /Si Interface”, Acta Physica Polonica A, Vol.113, No.3, pp.1067-1070, 2008. 48.
Литовченко Н.М., Литвин П.М., Медвiдь А.П., Мичко А, Насека Ю.М., “Вплив наноструктур, сформованних на поверхнi кристалiв CdZnTe методом лазерного сканування, на спектри iх низькотемпературноi фотолумiнесценцii”, Proc. of XII Intern. Conf. on Physics and Technology of Thin Films and Nanosystem,18-23, May 2009, Ivano-Frankivsk, Ukraine, Vol.1, pp.326-328, 2009. 49.
Artur Medvid, Igor Dmitruk, Pavels Onufrijevs, Iryna Pundyk, Laser-induced self-organization of nano-wires on SiO 2 /Si interface, Microelectronics Journal, Vol.40, Issue 3, pp. 449-451, 2009. 50.
A.Medvid‟, A.Mychko, O.Strilchyk, N.Litovchenko, Yu.Naseka, P.Onufrievs, Pludons, “Optical properties of nanostructure formed on a surface of CdZnTe crystal by laser radiation” ,
51.
A.Evtukh, A.Medvid, P.Onufrijevs, H.Mimura, “The Electron Field Emission from the Si Nanostructures formed by Laser Irradiation”, Technical Digest of the 2009 22 nd International Vacuum Nanoelectronics Conference, July 20-24, pp.135-136, 2009. 52.
A.Medvid‟, P.Onufrijevs, Klara Lyutovich, Michael Oehme, Erich Kasper, IgorDmitruk, Iryna Pundyk, Ivan Manak ,
“NANOHILLS IN SiGe/Si STRUCTURE FORMED BY LASER RADIATION”, J. of Automation, Mobile Robotics & Intelligent Systems, Vol.3, N0 4, pp.62-64,2009. 53.
Arturs Medvid‟, Aliaksandra Karabko, Pavels Onufrijevs, Edvins Daukst Anatoly Dostanko, “FORMATION OF “BLACK SILICON” ON A SURFACE OF Ni/Si STRUCTURE BY Nd:YAG LASER RADIATION”, J. of Automation, Mobile Robotics & Intelligent Systems, Vol.3, N0 4, pp.140-142, 2009.
54.
A. Medvid‟, P. Onufrijevs, L. Fedorenko, N.Yusupov, E. Daukšta “INFLUENCE OF POWERFUL LASER RADIATION ON FORMATION OF PORES IN Si BY ELECTROCHEMICAL ETCHING”, J. of Automation, Mobile Robotics & Intelligent Systems, Vol.3, N0 4, pp.166- 168, 2009. 55.
A.Medvids, A.Mychko, “Mechanism of nanostructure formation on a surface of CdZnTe crystal by laser irradiation”, J. of Automation, Mobile Robotics & Intelligent Systems, Vol.3, N0 4, pp.127-129, 2009. 56.
Heinmaa, T. Laas, A. Medvid, ” Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties”, Physica B. Vol. 404, pp. 5153–5155, 2009. 57.
Е.С. Панфиленок, И.С. Манак, А. Медвидс, “Моделирование процессов формирования низкоразмерных структур на поверхности полупроводников сканирующим лазерным излучением”, Электроника-инфо., Т. 7, С.72-75, 2009. - 535 - 58.
Gediminas Juška, Arturs Medvids, and Vidmantas Gulbinas, “Initial charge carrier dynamics in porous silicon revealed by time-resolved fluorescence and transient reflectivity”,
, Vol. 207, No. 1, pp.188–193, 2010. 59.
A. Medvid', P. Onufrijevs, K. Lyutovich, M. Oehme, E. Kasper, N. Dmitruk, O. Kondratenko, I. Dmitruk, and I. Pundyk, “Self-Assembly of Nanohills in Si 1- x Ge x /Si Hetero-Epitaxial Structure Due to Ge Redistribution Induced by Laser Radiation” J. Nanoscience & Nanotechnology, Vol.10, pp.1094-1098, 2010. 60.
D.Kropman, E.Mellikov, K.Lott, T.Karner, I.Heinmaa, T.Laas, A.Medvid, W.Skorupa, S.Prucnal, S.Zvyagin, E.Cizmar, M.Ozerov, J.Woznitsa, ”Interaction of point defects with impurities in the Si-SiO 2 system and its influence on properties of the interface”, Solid Sate Phenomena, Vols.156- 158,pp.145-148, 2010. 61.
W.Skorupa, S.Prucnal, S.Zvyagin, E.Cizmar, M.Ozerov, J.Woznitsa,”Interaction of point defects with impurities in the Si-SiO 2
Phenomena, Vols.156-158,pp.145-148, 2010. 62.
.A.Medvid‟, P.Onufrijevs, L.Fedorenko, N.Yusupov, E.Dauksta, “Suppression of Pores Formation on a Surface of p-Si by Laser Radiation”, Solid State Phenomena, vol.156-158, pp.337-341, 2010.
1.
Latvijas Republikas patents Nr. 13184 no 20.07.2004. 2.
A. Medvids, P. Onufrijevs. „Optisko šķiedru galu virsmas apstrādes paņēmiens” Latvijas Republikas patents Nr. 13578 no 13.12.2005. 3.
A. Medvids, P. Onufrijevs, “Dielektriķa dielektriskaās caurlaidības samazināšanas paņēmiens”, Latvijas Republikas patents Nr.13718 no 07.11.2006. 4.
monokristāliskā pusvadītāja virsmas”, Latvijas Republikas patents, Nr.13968 no 18 . 12.2007. 5.
A.Medvids, A.Mičko, P.Onufrijevs „Paņēmiens trīskomponentu pusvadītāju varizonas struktūras veidošanai, Latvijas Republikas patents Nr.13969 no 18 .
6.A.Medvids, P.Onufrijevs, „Varizonas struktūras veidošanas paņēmiens elementārajos pusvadītājos”, Latvijas Republikas patents Nr.13859 no 11.11.2008. 7.
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