The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure

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Materials Today: Proceedings 17 (2019) 442–445 
www.materialstoday.com/proceedings
 
2214-7853 © 2019 Elsevier Ltd. All rights reserved. 
Selection and Peer-review under responsibility of Conference Committee Members of 6th International Conference on Functional Materials & 
Devices 2017 (ICFMD 2017).
6th International Conference on Functional Materials & Devices (ICFMD 2017) 
The relative current change, concentration, and carrier mobility in 
silicon samples doped nickel and at pulse hydrostatic pressure 
O.O. Mamatkarimov
a
, R. Khamidov
b
, A. Abdukarimov
a
a
Namangan Institute of Engineering and Technology, 716030 Namangan, Uzbekistan 
b
Tashkent Branch of Russian Oil and Gas University after I.M. Gubkin, 100125 Tashkent, Uzbekistan
Abstract 
The paper presents the results of experiments on the changings in the current, concentration, and mobility of the current carriers 
in the relation to the initial value under pulse hydrostatic pressure. Have been shown that almost 50 % of the dynamic strain 
effect in the Si  samples due to changes in temperature and the other half is due to relaxation effects. 
© 2019 Elsevier Ltd. All rights reserved. 
Selection and Peer-review under responsibility of Conference Committee Members of 6th International Conference on 
Functional Materials & Devices 2017 (ICFMD 2017). 
Keywords: Semiconductor; Pulse pressure; Strain effect; Deep levels; Carrier mobility; Concentration, Hydrostaticprasure
1. Introduction 
If we introduce into the semiconductor with donor impurity levels the impurities that create acceptor levels in the 
forbidden zone of the semiconductor, the charge carriers from the donor levels are compensated by the acceptor 
centers. This leads to a decrease in the concentration of electrically active atoms in several orders of magnitude. If 
the compensating impurities create deep levels in the forbidden zone of a semiconductor, then such semiconductors 
are very sensitive to external mechanical influences. In such circumstances, deep impurity centers are not fully 
ionized even at room temperature. This leads to a significant increase in the sensitivity of the electrical parameters 
of semiconductor materials to external influences. 
* Corresponding author. Tel.: [phone]. 
E-mail address: [e-mail]

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O.O. Mamatkarimov et al. / Materials Today: Proceedings 17 (2019) 442–445 
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It is known [1, 2] that any change in the conductivity of semiconductors mainly related to the concentration and 
mobility of charge carriers. Under the influence of a pulsed hydrostatic pressure on a silicon single crystal, due to an 
adiabatic change in its volume, the temperature of the sample changes.
Under pulsed hydrostatic pressure due to adiabatic changes of fluid volume of the semiconductor the temperature 
of the sample changes, which in its turn leads to the manifestation of its electric strain properties. At present many 
research papers are devoted to the study of dynamic strain characteristic of semiconductors with deep impurity 
levels. But in almost all cases manifestation of the dynamic strain effect is explained only by the change of 
temperature, stimulated by pulse pressure. 
According to our assumptions in semiconductors with deep levels, the change in the electrical conductivity of the 
samples at the pulse hydrostatic pressure (PHP) makes a great contribution to the change in concentration of charge 
carriers. And the mobility of charge carriers in such semiconductors varies slightly.