The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure

3. Conclusion 
 
On the bases of above data it can be concluded that the Si  samples of almost half of the dynamic strain 
effect is due to changes in temperature and the other half is due to relaxation effects. As it is well known in the 
highly compensated semiconductors deep impurity atoms are in the field of strong inhomogeneous stress and any 

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O.O. Mamatkarimov et al. / Materials Today: Proceedings 17 (2019) 442–445 
445 
slightest external mechanical action results in reversible redistribution of these in homogeneities which in turn lead 
to further generation of non–equilibrium charge carriers. 
Literature 
[1] 
K.V. Shalimova Semiconductor Physics. Izd. Lan. Sankt Petersburg 2010. p. 400 
[2] 
Bormontov EN, MY Huhryansky Statistics of electrons and holes in semiconductors. - Voronezh: VSU Publishing House, 2003, p. 31 
[3] 
Pavlov A.P Measuring methods of parameters of semiconductor materials. : -M High School. 1987. 238p.