On phenomena in ionized gases
Specific plasma phenomena in magnetron sputtering systems
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- Bu sahifa navigatsiya:
- Generating EUV light from tin plasma for chip manufacturing
- Diagnosing negative ions using electrical probes
- 2. Unconventional probing methods to measure negative ions
- 2.1. Application of Hairpin probe
- 2.3. Negative ion temperature from floating potential of cylindrical probe
- 3. References
- A point-like discharge, sustained by powerful radiation of terahertz gyrotron
- Plasma and catalyst for the oxidation of NO x
Specific plasma phenomena in magnetron sputtering systems
P. Baroch, J. Vlček and J. Musil Department of Physics and NTIS - European Centre of Excellence, University of West Bohemia, Plzen, Czech Republic P
The main aim of this work is to show recent developments and specific phenomena in the field of magnetron sputtering technology. In the first part we will focus on the basic principles of reactive HiPIMS method with a feedback pulsed reactive gas flow control and an optimized location of the reactive gas inlets providing the possibility to produce high-quality oxynitride films with a tunable elemental composition, structure and properties at very high deposition rates. In the second part we will focus on the dual magnetron sputtering systems which belong to advanced sputtering methods solving problems of disappearing anode and partially also arcing. Recently, a specific plasma drift has been discovered in the dual magnetron system with tilted magnetrons and we will discuss specifics, properties and consequences of this phenomenon for thin-films deposition.
High-power impulse magnetron sputtering (HiPIMS) methods currently constitute an intensively developing area of magnetron sputtering technologies. However, deposition of dielectric oxide coatings using HiPIMS at high-powers (a peak value of the target power density of up to several kWcm
-2 in a pulse) is challenging due to significant arcing on the target surface. To avoid this problem and to achieve high deposition rate of the films, our group has proposed a solution based on the reactive HiPIMS with a feedback pulsed reactive gas (oxygen and/or nitrogen) flow control and an optimized location (high-density plasma zone) of the reactive gas inlets in front of the target. It will be shown that this way it was possible to produce high quality Hf-O-N films with a tunable elemental composition, structure and properties at very high deposition rates ranging from 175 nm/min for HfN films to 230 nm/min for HfO 2 films [1]. The method is based on the following principles: i) intense sputtering of atoms from the target resulting in a substantially increased deposition rate, ii) very high degree of dissociation of both O 2 and N
2 molecules in a discharge plasma, resulting in a replacement of O 2 and N 2 molecules, which have very different reactivity with metal atoms on the surface of the growing films, by atomic O and N, which have similar reactivity, and iii) strong “sputtering wind” of the sputtered atoms resulting in a reduced flux of the reactive gas particles onto the target substrate. In the second part we will focus on the phenomena occurring in the dual magnetron (DM). The DM is an advanced sputtering system which is effectively used for the deposition of thin films, particularly oxides and multiphase coatings [2]. Main advantages of this sputtering source lie in the suppression of arcing on the surface of the magnetron target and in the elimination of the disappearing anode effect, which is an issue in the reactive sputtering of electrically insulating oxides using a single magnetron. In this study we focus on the effect of the polarity of magnets on the performance of the DM, especially on the current- voltage characteristics and the deposition rates. A special attention will be devoted to the effect of the plasma drift [3] on the deposition process. This phenomenon occurs in the DM when the magnetrons are tilted as displayed in the Fig.1.
Fig.1. Side view photograph of the dual magnetron with closed magnetic field and tilted magnetrons. References [1] J. Vlček, A.Belosludtsev, J.Rezek, J.Houška, J. Čapek, R. Čerstvý and S. Haviar, High-rate reactive HiPIMS of hard and optically transparent HfO 2 films,
Surf. Coat. Technol. 290 (2016) 58. [2] P. Baroch, J. Musil, J. Vlcek, K.H. Nam and J.G. Han, Reactive magnetron sputtering of TiO x films, Surface and Coatings Technology 193 (2005) 107-111. [3] P.Baroch and J. Musil, Plasma Drift in Dual Magnetron Discharge - IEEE Transactions on Plasma Science 36 (2008) 1412-1413. Topic number 8 28
XXXIII ICPIG, July 9-14, 2017, Estoril/Lisbon, Portugal
Generating EUV light from tin plasma for chip manufacturing
O.O. Versolato 1
P 1 P
(EUV) light around 13.5 nm wavelength for nanolithography. It is our aim to understand this plasma at the fundamental level. I will present results on the plasma-pressure induced propulsion and hydrodynamic deformation of free-falling liquid-tin microdroplets as well as on charge-state- resolved measurement of highly charged tin ions using an electron beam ion trap.
Laser-produced tin plasmas are the prime candidates for the generation of extreme ultraviolet (EUV) light around 13.5 nm wavelength for nanolithography. This light is generated by atomic transitions in highly charged tin ions Sn 8+ -Sn
14+ . Due
to the complicated electronic configurations of these charge states, thousands of atomic lines contribute to the emission of EUV light from the hot (~100 eV) and very dense (~10 21 e/cm
3 ) plasma. It is our aim to understand this plasma at the fundamental level.
microdroplets as a function of laser pulse energy E
. The
inset shows shadowgrams of the expanding droplets. (b) Momentum coupling coefficient C m .
I will present measurements of plasma-pressure induced propulsion and hydrodynamic deformation of free-falling liquid-tin microdroplets (see Fig. 1) by laser pulse impact [1]. These measurements, and the scaling laws obtained from them, serve as precision tests of state-of-the-art plasma simulation and theory predictions. To obtain a better understanding of the atomic processes within the laser generated plasma we performed charge-state- resolved measurement (see Fig. 2) of highly charged tin ions using an electron beam ion trap (EBIT). Combining the EBIT measurements with both the semi-empirical COWAN code as well as ab initio techniques for calculating the level structure, the optical spectra could be assigned [2,3]. We conclude that assignments of EUV transitions in the literature require corrections. EUV and optical spectra are measured simultaneously in
the controlled conditions of the EBIT as well as in our microdroplet-based laser-produced plasma source, thus providing information on the contribution of Sn charge states to the EUV emission. Fig. 2 (c) Composite spectral map from electron beam ion trap (EBIT) spectroscopy of highly charged Sn ions. (d) Fluorescence yield for each charge state as a function of the EBIT’s electron beam acceleration potential.
[1] D. Kurilovich et al, Phys. Rev. Appl. 6 (2016) 014018 [2] A. Windberger et al, Phys. Rev. A 94 (2016) 012506 [3] F. Torretti et al, (accepted for publication in Phys. Rev. A) (2016) arXiv:1612.00747
Topic number (c) (d)
(c) (d)
29 XXXIII ICPIG, July 9-14, 2017, Estoril/Lisbon, Portugal
Diagnosing negative ions using electrical probes
S. K. Karkari P 1 P , A. Pandey 1 , N. Sirse 2 and M. Turner 2
P 1 P
P
P
Unconventional application of hairpin and Langmuir probes has been demonstrated to quantify negative ion temperature and density in electronegative plasma. This includes the estimation of negative ion temperature based on floating potential of a cylindrical Langmuir probe and inferring negative ion density by resonance hairpin probe in conjunction with pulse laser photo-detachment method. The underlying principle behind these techniques shall be discussed along with experimental findings of plasma parameters in oxygen discharge.
Electronegative plasmas are highly popular in semiconductor industries besides being used for producing energetic neutral beams for plasma heating in fusion devices. The negative ions presence in the discharge can dramatically influence the characteristic Bohm speed of positive ions entering the sheath and leaving the plasma boundary. The discharge impedance is also impacted due to negative ions. Thus quantification of negative ion parameters is important for characterization of negative ion sources besides being useful in the fundamental studies of negative ion plasmas in laboratory.
The conventional method to measure negative ion density is achieved by pulse laser photo- detachment technique [1]. This method relies on a detection probe to measure the photo-detachment current signal. Though this serves as a basic tool for the quantification of negative ions, however certain complication arises in magnetized plasmas. In this case, the detection probe when biased to electron saturation current severely depletes the plasma electrons in the magnetic flux tubes attached to the probe surface. Therefore estimates of plasma parameters are affected besides the probe introduce strong perturbation to the plasma.
negative ions To overcome above limitation, unconventional probing methods have been developed based on resonance hairpin and cylindrical Langmuir probes. 2.1. Application of Hairpin probe The hairpin probe is based on microwave technique and has been used for the detection of negative ions both inside and outside the photo- detachment region [3]. Experimental results have shown that the positive ions in the photo-detached channel are strongly depleted after the pulse laser beam has expired [4]. To address the above issue, a direct method of inferring negative ion parameters by hairpin probe has been developed. The negative ion parameters have been inferred by time modulating the dc sheath around the hair-pin prongs [5] with a train of rectangular voltage pulses applied to the hair-pin probe. Synchronous measurement of electron density provides the information of negative ion parameters around the hairpin.
Recently, floating potential of a cylindrical probe have been investigated as a function of electronegative parameters α = n _ / n e and γ = T e /T _ ;
[6]. A comparison of analytical curves of floating potential as a function of α, with γ as a free parameter enables to calculate T _ by tuning the value of γ to match with the floating potential obtained in experiment. Using this method, the negative ion temperature in oxygen discharge has been found in the range of 0.05 – 0.07 eV at operating pressures of 4.0 – 7.0 Pa.
[1] M. Bacal. Rev. Sci. Instrum, 71(11) (2000) 3981
[2] S. K. Karkari, C. Gaman, A. R. Ellingboe. APL. 28 (2008) 071501. [3] N. Sirse, S. K. Karkari, M. A. Mujawar, J. Conway, M. Turner. Plasma Sources Sci. Technol. 20 (2011) 055003 [4] J. Conway, N. Sirse, S. K. Karkari, M.M Turner. Plasma Sources Sci. Technol. 19 (2010) 065002
[5] N. Sirse, S. K. Karkari, M. Turner. Plasma Sources Sci. Technol. 24 (2015) 022001 [6] A. Pandey, S. K. Karkari. Physics of Plasma,
Topic Number 06 30
XXXIII ICPIG, July 9-14, 2017, Estoril/Lisbon, Portugal
A point-like discharge, sustained by powerful radiation of terahertz gyrotron
A. V. Vodopyanov, A. V. Sidorov, S. V. Razin, A. G. Luchinin, A. P. Fokin, A. I. Tsvetkov, A. P. Veselov, M. Yu. Glyavin, S. V. Golubev
P Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod, Russia
We propose to use the discharge plasma sustained by terahertz radiation as a source of extreme ultrabviolet light for high-resolution lithography. Experimental studies of the breakdown sustained by terahertz waves in the nonuniform gas jet was performed on two cases: in pulsed mode - the radiation frequency of 670 GHz, pulse duration of 30 µs, power of 50 kW; in CW mode - the radiation frequency of 263 GHz; power up to 1 kW. The plasma density was measured from the Stark broadening of the line H α . The radiation in the vacuum ultraviolet region was investigated using a calibrated PMT and filters, the radiation in the extreme ultraviolet investigated absolutely calibrated detector with filter sets.
Today micro- and nano- electronics industry requires a source of extreme ultra-violet (EUV) radiation with a wavelength of 13.5 ± 1 % nm for high resolution projection lithography. The power of the source must be at a level of 1 kW at the size of the emitting region of less than 1 mm. One of the most promising sources of EUV light is considered to be a source that uses a pulsed CO 2 laser radiation focused on a specially formed stream of droplets of tin with dimensions of the order of 0.1 mm. However, along with tangible achievements in these light sources have a number of fundamental flaws that do not allow us to consider the problem of creating a EUV light source to be solved. We propose to use discharge plasma sustained by terahertz radiation as a source of EUV light for high-resolution lithography. In this report we discuss the experimental investigation of two types of EUV sources based on discharge sustained by powerful gyrotron radiation. An increase in plasma density with increasing frequency of the heating wave to the value of 10 15 cm
-3 and above makes a plasma resonance heating mechanism effective with small plasma size. The main idea of creating of a point discharge with high emissivity in the required wavelength band is the realization of a breakdown in a nonuniform gas jet with the scale of the inhomogeneity of the order of 1 mm. In this case, breakdown conditions fulfilled only in a small region of space and discharge cannot go beyond it [1-3]. In this work the experimental studies of the breakdown sustained by terahertz waves in the nonuniform gas jet was performed on two cases: in pulsed mode - the radiation frequency of 670 GHz, pulse duration of 30 µs, power of 50 kW; in CW mode - the radiation frequency of 263 GHz; power up to 1 kW. Figure 1 shows the photograph of the point-like plasma in that two cases. The plasma density was measured from the Stark broadening of the line H α .
a) b) Fig. 1. Photograph of the point-like plasma sustained by CW 263 GHz (a) and by pulsed 670 GHz focused beams
The radiation in the vacuum ultraviolet region was investigated using a calibrated PMT and filters, the radiation in the extreme ultraviolet investigated absolutely calibrated detector with filter sets. The work was supported by Russian Science Foundation, project # 14-12-00609.
[1] M. Glyavin, S. V. Golubev, I. V. Izotov, et.al., Appl. Phys. Lett., vol. 105, no. 17, 2014. [2] A. V. Sidorov, S. V. Razin, S. V. Golubev, et. al., Physics of Plasmas 23 (4), 043511 [3] M.Yu. Glyavin, S.V. Golubev, V.G. Zorin, et al, Radiophysics and Quantum Electronics, Vol. 56, Nos. 8–9, January, 2014. 16
31 XXXIII ICPIG, July 9-14, 2017, Estoril/Lisbon, Portugal
Plasma and catalyst for the oxidation of NO x
I. Jõgi P 1 P , K. Erme 1 , E. Levoll 1 , J. Raud 1 , E. Stamate 2 P
rgy P
1 P
P
P
The removal of NO x from the exhaust gases requires the oxidation of most abundant NO to NO 2 or
N 2 O 5 . The oxidation can be done by non-thermal plasma but the efficiency is limited due to the back-reaction of NO 2 to NO by O radicals. Present contribution investigates the role of catalysts in the improvement of oxidation efficiency based on the stationary and time-dependent studies of the NO x oxidation at different reactor configurations and experimental conditions. The plasma produced active oxygen species (O, O 3 ) were shown to play an important role in the reactions taking place on the catalyst surfaces while the exact mechanism and extent of the effect depended on the reactor configuration. The effect of catalyst at different experimental conditions was quantitatively described with the aid of analytical lumped kinetic models derived for the NO x
oxidation when the catalyst was directly in contact with plasma or only with the ozone.
NO x
2 ) produced in the burning of fossil fuels is a major threat to the environment [1]. The available adsorption or absorption based NO x
abundant NO x constituent NO is oxidized to NO 2 or
N 2 O 5 . The oxidation can be done by non-thermal plasmas which produce highly reactive oxygen species (O, OH, O 3 ). One of the main limiting factor for plasma oxidation of NO in O 2 :N 2 mixtures is the back-reaction of NO 2 to NO by O radicals [2]. The presence of such back-reaction distinguishes the NO x from organic compounds which are also often oxidized by plasma. The back-reaction can be suppressed by different means including the indirect treatment by ozone or the use of catalyst. Present contribution investigates the role of catalyst in the plasma oxidation of NO x . The
investigation involved stationary and
time- dependent studies of NO x oxidation with different configurations of plasma and catalyst placement at varying experimental conditions. Furthermore, analytical lumped kinetic models incorporating effective reaction coefficients for NO x oxidation were derived to quantify the effect of catalyst at different experimental conditions [3,4]. The results were mostly obtained in dry O 2 :N 2 mixtures.
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