Optoelectronic Semiconductor Devices Principals and Characteristics


II. Geometry in the transverse direction


Download 1.1 Mb.
Pdf ko'rish
bet16/43
Sana28.01.2023
Hajmi1.1 Mb.
#1137103
1   ...   12   13   14   15   16   17   18   19   ...   43
Bog'liq
Optoelectronic Semiconductor Devices-Principals an

II. Geometry in the transverse direction
 
1. Broad area lasers: multiple longitudinal modes and multiple 
transverse modes
2. Stripe geometry lasers (single-mode lasers): single transverse mode 
and multiple longitudinal modes
i. Gain-guided stripe geometry lasers
ii. Index-guided stripe geometry lasers
III. Optical cavity (single-mode single frequency)
 
1. Short cavity lasers
2. Lasers with distributed Bragg reflectors, distributed feedback, or 
external grating reflectors
3. Lasers with external mirrors, grooved couple cavity, cleaved 
coupled cavity, or integrated etalon interference
To our reference is useful to present the evolution of laser diodes into the Table 
5.
 


3.4 BASIC CHARACTERISTICS OF LASER DIODES 
The three essential components in a laser system are an amplifying medium, an optical feedback and a 
pumping source. 
The operation of an ILD can be described as follows: 
• 
[1]Electrons are injected from the n-side of a junction to the p-side and holes - from the opposite 
direction. 
• 
[2]In the depletion region, electrons are near the bottom of the conduction band, while holes are 
near the top of the valence band. 
• 
[3]Photons are emitted when electrons and holes recombine.The injected current above the 
threshold induces stimulated emission, and coherent light is emitted from the laser diode. 
• 
[4]Electric charges return through the external circuit. 
Lasers are classified as three-level or four-level systems. To determine how ILDs should be classified, 
consider a DH injection laser with an energy diagram as shown in Figure 
18.
 
Figure 18.: Energy diagram of heterostructure ILD. 
[1]
 
As we can see from the Figure 
18.
, lasing occurs in the narrow band-gap semiconducting layer 
sandwiched between two wide band-gap semiconductors. The difference between three- and four-level 
systems involves whether level E
a
is normally occupied. Since in an ILD, the top of the valence band in 
the active region is normally vacant, ILDs are considered four-level systems. 



Download 1.1 Mb.

Do'stlaringiz bilan baham:
1   ...   12   13   14   15   16   17   18   19   ...   43




Ma'lumotlar bazasi mualliflik huquqi bilan himoyalangan ©fayllar.org 2024
ma'muriyatiga murojaat qiling