Oxygen in Silicon Single Crystals

Graff K., Grallath E., Ades S., Goldbach G., Tolg G. Bestimmung von parts per Bil­

lion Sauerstoff in Silizium durch Eichung der lR-absorption bei 77 K // Solid State Electronics.-1973.-V. 16, N 8.-S. 887-893.

69. 
    Livingston F. M., Messoloras S., Newman R. C., Pike B. C., Stewart R. J., Binns
    

M. J., Brown W. P., Wilkes J. G. An infrared and Neutron Scattering Analysis of the Precipitation of Oxygen in Dislocation-Free Silicon // J. Phys. C: Solid State Phys.-1984.-V.17, N 34.-P. 6253-6276.

70. 
    Mikkelsen J. C. Jr. Diffusity of Oxygen in Silicon During Steam Oxidation // Appl.
    

Phys. Lett.-1982.-V.40, N 4.-P. 336-337.

71. 
    Messoloras S., Newman R. C., Stewart R. J., Tucker J. H. Is Enhanced Interstitial
    

Oxygen Diffusion Necessary to Explain the Kinetics of Precipitation in Silicon at Temperature Below 650°C? // Semicond. Sci. and Technology.-1987.-V.2, N 1.-P. 14-19.

72. 
    Ham F. S. Theory of Diffusion-Limited Precipitation // Phys. Chem. Solids.-1958.
    

-V.6, N 4.-P. 335-351.

73. 
    Kimerling L. C., Patel J. R. Silicon Defects: Structures, Chemistry and Electrical
    

Properties // VLSl Electronics: Microstructure Science.-1985.-V.12. -P. 223-267.

74. 
    Newman R. C., Clayborn M., Kinder S. H., Messoloras S., Oates A. S., Stewart R.
    

J. In: Semiconductor Silicon 1986, edited by H. R. Huff, T. Abe and B. Kolbesen (Electrochemical Society, Pennington, New Jersey, 1986).-P. 766.

75. 
    Kaiser W., Frisch H., Reiss H. Mechanism of the Formation of Donor States in
    

Heat-Treated Silicon // Phys. Rev.-1958.-V.112, N 5.-P. 1546-1554.

76. 
    Gcsele U., Tan T. Y. Oxygen Diffusion and Thermal Donor Formation in Silicon //
    

Appl. Phys. A.-1982.-V.28, N 1.-P. 79-92.

77. 
    Gaworzewski P., Ritter G. On the Out-Diffusion of Oxygen from Silicon // Phys.
    

Stat. Sol. (a).-1981.-V.67, N 2.-P. 511-516.

78. 
    Lee S.-Tong, Nichols D. Diffusivity and Diffusion Mechanism of Oxygen in Silicon
    

// Mat. Res. Soc. Symp. Proc.-1986.-V.59.-P. 31-37.

79. 
    Benton J. L., Kimerling L. C., Stavola M. The Oxygen Related Donor Effect in Sili­
    

con // Physica B.-1983.-V.116.-P. 271-275.

80. 
    Newman R. C., Oates A. S., Livingston F. M. Self-interstitials and Thermal Donor
    

Formation in Silicon: New measurements and a Model for the Defects // J. Phys. C: Solid State Phys.-1983.-V.16, N 19.-P. L667-L674.

81. 
    Lee S.-Tong., Fellinger P. Enhanced Oxygen Diffusion in Silicon at Thermal Donor
    

226




Formation Temperature // ln: Defects in Semiconductors, edited by H. J. von Bardeleben (Materials Science Forum V.10-12, 1986).-P. 1021-1026.

82. 
    Helmreich D., Sirtl E. Oxygen in Silicon: A Modern View // In: Semiconductor Sili­
    

con 1977, edited by H.R.Huff and E.Sirtl (Electrochemical Society, Pennington, New Jersey, 1977).-P. 626-636.

83. 
    Pajot B., Compain H., Lerouille J., Clerjaud B. Spectroscopic Studies of 450°С
    

Thermal Donors in Silicon // Physica B+C.-1983.-V. 117-118.-P. 110-112.

84.