Study of the thermal and temperature conditions of flat and inclined lands tekis va qiyalik yerlarning issiqlik va temperatura rejimini o

Калит сўзлар: қаттиқ қоришма, эрувчанлик, тўйинган қоришма, ковалент боғ, 
кристалланиш, суюқ фазали эпитаксия, эпитаксиал қатлам, ҳолат диаграммаси. 
 
Introduction. The development of modern semiconductor instrumentation is uninterruptedly 
linked with the success in improving the technology for producing traditional semiconductor 
materials, the development and research of new promising semiconductors. The great possibilities of 
semiconductor microelectronics are realized only with the development of the production of 
multifunctional semiconductor materials with various physical properties. In this aspect, 
semiconductor solid solutions of binary compounds III-V and II-VI have great opportunities [1-7]. 
The crystalline perfection of solid solutions is mainly determined by the crystal structures of the 
solution-forming components, as well as the geometric dimensions and charge states of the molecules 
of these components. Binary compounds GaAs and ZnSe have the same crystal structure (like zinc 
blende), and the lattice constants are a
GaAs
= 5.6532 Å and a
ZnSe
= 5.6676 Å, respectively. The sums of 
the valence (z) of the atoms of the molecules of these compounds are equal: z
Ga
+ z
As
= z
Zn
+ z
Se
= 8. 
All these facts indicate that GaAs and ZnSe are promising materials for obtaining the ZnSe/GaAs 
interface and molecular substitution solid solutions such as (ZnSe)
1-х
(GaAs)
х
high quality. 
Objects and research methods 
This paper presents the results of a study of the technological features of liquid-phase epitaxy of 
the monocrystal solid solution of molecular substitution (GaAs)
1-x
(ZnSe)
x
. 
Solid solutions (GaAs)
1-x
(ZnSe)
x
were grown by liquid-phase epitaxy according to the 
technology described in [8] on monocrystal GaAs substrates with orientation (100), ~ 400 μm thick. 
The growth of the epitaxial layer was carried out from a limited volume of a tin solution-melt, limited 
by two horizontally arranged substrates in an atmosphere of hydrogen purified with palladium (Fig. 
1). 

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