Ўзбекистон миллий университети қошидаги яримўтказгичлар физикаси ва микроэлектроника илмий-тадқИҚот институти ҳузуридаги илмий

The subject of the research work is a technology for controlling the state of 
clusters of nickel impurity atoms by their composition, structure, size and 
distribution in the silicon lattice, as well as the development of a new original 
method for preserving the initial electrical and recombination parameters of silicon 
under various conditions of thermal annealing based on gettering clusters of 
impurity atoms of various «harmful» impurity atoms and defects. 
Scientific novelty of the research consists in determining thermodynamic 
conditions for forming clusters of impurity atoms of nickel and controlling their 
concentration, composition, structure and distribution throughout the crystal lattice 
that were determined on the basis of modern microscopic studies; 
it was found that the formation of clusters of impurity atoms of nickel does 
not depend on the type and concentration of the initial impurity atoms in the 
crystal; 
a new phenomenon was discovered for the first time, i.e., self-assembly of 
clusters of impurity nickel atoms, whereas their size does not depend on the 
density of dislocations in the crystal; 
for the first time a new phenomenon was discovered, i.e., the formation of 
cluster lines, where the ordering of clusters was explained by the displacement of 
small clusters in the crystal lattice under certain thermodynamic conditions and a 
model of its structure was proposed; 
for the first time a mechanism of ordering of clusters of impurity atoms of 
nickel due to synchronous and simultaneous migration of all nickel atoms in 
clusters located in an interstitial position in a crystal lattice was proposed; 
a new phenomenon was discovered for the first time - the collective migration 
of clusters of impurity atoms of nickel in silicon lattice and the migration 
coefficient of these clusters were determined, which is 1.5÷2 fold less than the 
diffusion coefficient of nickel atoms; 
the effect of gettering of clusters of impurity atoms of nickel of various 
specially introduced "alien" defects and uncontrolled impurity atoms (O
2
, Fe, Mn, 
etc.) was established; 
it was found that the effective interaction of oxygen atoms with clusters of 
impurity atoms of nickel significantly suppresses the generation of thermal donors 
arising under different conditions of heat treatment; 
for the first time it was shown and experimentally proven that the formation 
of clusters of impurity atoms of nickel in semiconductor materials, including in the 
crystal lattice of silicon, makes it possible to obtain a bulk nano- and micro-

---

structured material - as a new class of a semiconductor material with unique 
functional capabilities for electronics, optoelectronics and photonics.