Ал-хоразмий номли урганч давлат университети

§5. Zaryad tashuvchilarning p-n o`tishdagi taqsimоti..............................................................44
§6. P-N o’tish chegarasida potentsial bar’er…..52
§7. P-N o`tishdagi diffuziyaviy va drеyf tоklari.55
§8. Idеal o`tish kеngligini hisоblash...................64
§9. P-N o’tishdan tokni to’g’rilashda foydalanish. Diodni asosiy tenglamasi………........................68
§10. P-N o’tishdan o’zgaruvchan resistor sifatida foydalanish…. ………………….……………..75
§11. P-N o’tishni kambag’allashgan sohasining sig’imi.................................................................80
§12. Yarimo’tkazgich diodlar………….……....84

§13. Yorug’lik diodlari………..………………101

§14. Fotodiod…………………………………106

GLOSSARIY……………………….…..……109
ADABIYOTLAR.…….……………..………118
CONTENTS


THE BEGINNIG………….……………………...5
§ 1. Introduction. The task of the subject “Fundamentals of semiconductor electronics”........8
§ 2. Work function. Richardson-Deshman equation…………………………………...……...22
§3. Curvature of energy levels in a metal-semiconductor contact. Corrective property
of these contacts ....................................................30
§4. Semiconductor-semiconductor contact. Formation of p-n junction…….…..………….......37
§5. Distribution of charge carriers in the p-n junction.. .............................................................. 44
§6. Potential barrier at the border of the p-n junction……………………………...……….......52
§7. Diffusion and drift currents at p-n junction….55
§8. Calculating the ideal transition width..............64