BEST SCIENTIFIC
RESEARCH - 2022
155
STUDY OF THE EXCESS CURRENT IN THE TUNNEL DIODE IN THE CHAYNOVET
MODEL UNDER THE INFLUENCE OF A MAGNETIC FIELD AND A VERY HIGH
FREQUENCY FIELD
Dadamirzaev Mukhammadjon Gulomkodirovich
Namangan Institute of Engineering and Construction, Uzbekistan
Oktamova Munira Komiljon qizi
Research Institute of Semiconductor Physics and Microelectronics under the National
University of Uzbekistan
Abstract: In this work, the value of the excess current generated in the tunnel diode
was studied under the influence of a magnetic field and an ultra-high frequency field. It was
found that the excess current generated in the tunnel diode increases under the influence
of an extremely high frequency field. When we additionally applied the magnetic field, the
excess current was reduced.
Keywords: Chaynovet model, O'YuCh field, magnetic field, excess current.
1. Introduction
Due to the high resistance of tunnel diodes to high temperatures, as well as to strong
electromagnetic fields, the effects of ultra-high frequency electromagnetic fields on tunnel
diodes are widely studied. A.G.Aranov and G.E.Pikuslar theoretically calculated the effect
of the magnetic field on the tunnel current[1] and compared it with the experimental results
conducted by Rediker Kalav on the tunnel diode made on the basis of PbTe element[2]. L.H.
Syrkin,
N.N. Feoktistov [3] studied the possibility of detecting mechanical defects in the
tunnel diode when pressure is applied to the excess current generated in the tunnel diode
under the influence of a magnetic field. D.A. Usanov and A.V. Skripal[4] proved theoretically
and experimentally that when the field affects the tunnel diode, the volt-ampere
characteristic of the tunnel diode turns into the volt-ampere characteristic of a normal diode.
Graphs of dependence of the tunnel current on the power and voltage under the influence
of the magnetic field and O'YuCh field were obtained as a result of experiments based on
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